IPB80N06S2L06ATMA2 Allicdata Electronics
Allicdata Part #:

IPB80N06S2L06ATMA2TR-ND

Manufacturer Part#:

IPB80N06S2L06ATMA2

Price: $ 0.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 80A TO263-3
More Detail: N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-...
DataSheet: IPB80N06S2L06ATMA2 datasheetIPB80N06S2L06ATMA2 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.68085
Stock 1000Can Ship Immediately
$ 0.75
Specifications
Vgs(th) (Max) @ Id: 2V @ 180µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 6 mOhm @ 69A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPB80N06S2L06ATMA2 is an N-channel enhancement mode Power MOSFET designed to best fit a wide range of applications. This MOSFET features a low-voltage and low-Rds( on) performance, making it suitable for various applications. It is a single-channel MOSFET meaning that it is a single component with only one channel of operation. This component has a maximum operating voltage of 500V, meaning it can supply a significant amount of power to the component, allowing for significantly more efficient operation. The IPB80N06S2L06ATMA2 also provides a low on-resistance (Rds(on)) of 0.3Ω, and a low gate threshold voltage of 2V, making the component suitable for many low voltage applications.

One of the primary applications for the IPB80N06S2L06ATMA2 is in power supplies, as it can be used to control the current flowing between the power supply and the circuit powering it. This MOSFET can also be used in motor control applications, where it can be used to control the speed of the motor by controlling the current supply. Similarly, the component can be used in audio amplifiers and can also be used in other motor control applications.

The IPB80N06S2L06ATMA2 works using the principles of the MOSFET, which stands for Metal Oxide Semiconductor Field-Effect Transistor. In this component, the gate is the voltage source that provides the voltage to the component, while the drain and source are the two electrodes that provide the current flow to the component. The drain supplies current from the power supply to the component, while the source supplies current from the component to the power supply. The gate-to-source voltage (VGS) controls the amount of current flowing through the component, with a higher voltage causing a larger amount of current flow.

The IPB80N06S2L06ATMA2 also features an extremely low threshold voltage of 2V making it suitable for a wide range of low voltage applications. This is due to the fact that a lower threshold voltage improves the turn-on time of the component, allowing it to be used in applications with higher frequencies and higher switching speeds. The lower threshold voltage also allows the component to switch devices on and off faster, providing an improved overall performance.

In conclusion, the IPB80N06S2L06ATMA2 is an ideal component for a wide range of applications due to its low-voltage, low-Rds(on) performance, and its gate threshold voltage. It can be used in power supplies, motor control, audio amplifiers, and other applications. This component works by providing gate voltage to control the current flow, while the two electrodes provide current supply. Finally, this component features an extremely low gate threshold voltage of 2V, making it suitable for a wide range of low voltage applications.

The specific data is subject to PDF, and the above content is for reference

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