IPB80N06S2L11ATMA1

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The IPB80N06S2L11ATMA1 is a single N-channel TransFET transistor, built using Toshiba’s proprietary, advanced trench field-stop (TFS) technology to provide excellent RDSON, Avalanche energy rating and Qg. This type of field-effect transistor (FET) operates based on the principle of minority carrier injection.

Application Field

The IPB80N06S2L11ATMA1 has applications in a wide variety of fields, including automotive, consumer, and industrial. Its design allows for very efficient switching, making it a viable option for numerous applications in power management, motor drive, and server management. Specifically, it is used for battery power systems, LED lighting, DC/DC and AC/DC converters, variable speed drives, and high wattage current levels.

Working Principle

An N-channel TransFET works by injecting electrons, or “minority carriers”, into the substrate, creating a conductive n-type channel. The n-type channel then connects the source terminal to the drain terminal, depending on the gate voltage.

The IPB80N06S2L11ATMA1 uses a specially designed trench field stop (TFS) technology; this technology extends the n-type channel deep into the substrate and effectively shuts off current leakage. The result is an hugely improved RDSON rating compared to other types of FETs.

At the same time, the TFS design reduces power dissipation and improves electrical performance. This is further enhanced by a wide operating temperature range, allowing the device to work effectively even in temperature-extreme environments.

The device is also rated for a high Avalanche energy rating, allowing it to switch currents of up to 131 A. With its low Qg, the IPB80N06S2L11ATMA1 is capable of switching currents very rapidly, making it suitable for applications requiring a high speed.

In summary, the IPB80N06S2L11ATMA1 is a single N-channel TransFET transistor that offers excellent performance and reliability when used in applications such as power management, motor drive, and server management. It can be used in a wide variety of fields including automotive, consumer, and industrial, and its low RDSON rating, high Avalanche energy rating, and fast switching speed make it a suitable choice for many applications.

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