IPB80N06S405ATMA1

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IPB80N06S405ATMA1 Application Field and Working Principle

The IPB80N06S405ATMA1 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) designed for electronic switching applications. It is a single-channel enhancement-mode power MOSFET with a very low on-resistance and a low gate-to-source threshold voltage. The MOSFET provides both high- and low-side switch functions, enabling its use in various applications such as motor control and power supplies. There are a few key features and characteristics of the IPB80N06S405ATMA1 that make it a desirable choice for specific applications.

Features and Characteristics

The IPB80N06S405ATMA1 provides a low on-resistance of just 0.76 ohms and an extremely low gate-to-source threshold voltage of 1.2 Volts. Its low on-resistance, combined with its low gate-to-source threshold voltage, makes it an ideal choice for applications where low-side switching are required. When used for voltage conversion applications, it also ensures that less power is lost due to lower voltage headroom.

The IPB80N06S405ATMA1 has a drain-source voltage, or VDS, rating of 80V, which is quite high for a typical low-side switch MOSFET. This ensures that it can handle higher voltage applications. It also has a drain current rating of 86A, making it capable of supplying a higher amount of current than most low-side switching MOSFETs. Finally, its drain-source capacitance of 6.6nF and its low input capacitance of 2.2nF make it well-suited for high-frequency applications, such as those found in motor control and power supplies.

Application Fields

The IPB80N06S405ATMA1 is often used in motor control applications that require low-side switching. Its low on-resistance and high-current rating make it an ideal choice for applications that require the delivery of large amounts of current with little power loss. It is also suitable for power supplies because of its high VDS rating and low input capacitance, which make it well-suited for high-frequency switching requirements. Finally, its low gate-to-source threshold voltage makes it a good choice for voltage conversion applications.

Working Principle

A MOSFET works by controlling the flow of current in the drain-source path of the transistor. It does this by using an input voltage applied to the gate to control the conductivity of the semiconductor channel between the drain and source. When the voltage at the gate is greater than a certain threshold, the transistor is in the on-state and current can flow in the drain-source path. Conversely, when the gate voltage is below the threshold, the transistor is in the off-state and current cannot flow through the drain-source path.

The IPB80N06S405ATMA1 is an enhancement-mode MOSFET, meaning that the transistor is initially in the off-state and requires an input voltage above the threshold voltage to switch it on. When an input voltage is applied to the gate, the transistor will turn on and allow current to flow through the drain-source path. The current flow can then be regulated by adjusting the gate voltage.

Conclusion

The IPB80N06S405ATMA1 is a single-channel enhancement-mode power MOSFET designed for electronic switching applications. It provides a low on-resistance of 0.76 ohms, a gate-to-source threshold voltage of 1.2 Volts, a VDS rating of 80V, and a drain current rating of 86A. These characteristics make the IPB80N06S405ATMA1 well-suited for applications such as motor control and power supplies, where low-side switching and high-frequency switching are required. This MOSFET utilizes an input voltage applied to the gate to control the flow of current in the drain-source path, with the current flow being regulated by adjusting the gate voltage.

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