IPB80N06S2L07ATMA1

Vgs(th) (Max) @ Id:	2V @ 150µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	210W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3160pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	6.7 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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IPB80N06S2L07ATMA1 Application Field and Working Principle

The IPB80N06S2L07ATMA1 is a p-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a type of single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) suitable for switching and low noise amplifying application. It is available in a TO-252 (DPAK) package, allowing it to be directly mounted onto a Printed Circuit Board (PCB).The IPB80N06S2L07ATMA1 has a voltage rating of –55 to –200 V and can handle a continuous current of up to 15 A. This makes it suitable for a range of applications such as motor control, power supply design, power management, and more. In addition, the device has a Low On Resistance of 40 mΩ, making it suitable for high-efficiency power conversion applications.MOSFETs operate by using an electric field to control the flow of current. When a voltage is applied to the gate of the MOSFET, it creates an electric field which changes the width of the “channel” through which current can flow between the source and the drain. The electric field causes the electrons to repel each other and create a “barrier”, thus controlling the flow of current.The IPB80N06S2L07ATMA1’s low on resistance allows it to handle high loads without causing significant power losses. It is also very small in size, which makes it particularly suitable for portable applications. In addition, the device has superior ESD (electrostatic discharge) immunity. This means that it can withstand sudden and extreme voltage changes, making it suitable for use in high-voltage applications.The IPB80N06S2L07ATMA1 is an ideal choice for applications requiring high efficiency and low power losses. Its low on resistance, coupled with its small size and high ESD immunity, make it suitable for a range of applications in the automotive, industrial, and consumer markets. It also has a wide operating temperature range and is compliant with the RoHS Directive. This makes it suitable for use in a variety of applications across different industries.

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