IPB80N06S207ATMA1

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IPB80N06S207ATMA1 is a single N-channel enhancement-mode MOSFET (metal–oxide–semiconductor field-effect transistor). It is a transistor that uses an electric field to control the flow of current. MOSFETs are a type of transistor that is commonly used for switching and amplifying electronic signals. This device is suitable for use in high-speed switching, power converters, motor control, and power management applications.

The IPB80N06S207ATMA1 has a drain-source voltage rating of 80 V with a continuous drain current of 54 A and a maximum pulsed drain current of 237 A. It has a gate-source voltage rating of ±20 V and a maximum power dissipation of 268 W. It is provided in a SuperSO8 package. This package utilizes 4 bolt holes for mechanical fixing.

The working principle of the IPB80N06S207ATMA1 MOSFET is based on the principle of operation of a field-effect transistor. When a voltage is applied to the gate, an electric field is created in the channel between the drain and the source. This electric field modulates the conductivity of the channel, controlling the amount of current that can flow between the drain and the source.

The IPB80N06S207ATMA1 is suitable for a variety of applications, such as motor control, power conversion, and power management. It is also used in power supplies, high-speed switching, DC/DC and AC/DC converters, and in telecommunication systems. It is often used in switching and amplifying applications, due to its low on-resistance and fast switching speed. Additionally, it can be used in high-voltage switching applications in automotive and aviation.

In summary, the IPB80N06S207ATMA1 is a single N-channel enhancement-mode MOSFET suitable for use in a variety of applications, including high-speed switching, power conversion, motor control, and power management. It has a drain-source voltage rating of 80 V with a continuous drain current of 54 A, a gate-source voltage rating of ±20 V, and a maximum power dissipation of 268 W. This device utilizes the principle of operation of a field-effect transistor, in which an electric field is created in the channel between the drain and the source, controlling the amount of current that can flow. It is provided in a SuperSO8 package.

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