IPB80N06S2L06ATMA1

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IPB80N06S2L06ATMA1 Application Field and Working Principle

The IPB80N06S2L06ATMA1 is a high-voltage, high-current logic level N-channel metal oxide semiconductor field-effect transistor (MOSFET). It can be used in applications such as data storage and transmission, power switching, motor control, and voltage and current level shifting.

A MOSFET is essentially a three-terminal switch that, when operated properly, can control the flow of current between two terminals. The source-drain channel of the MOSFET is formed between an N-type source and an N-type drain. By applying a voltage between the gate and source, a current will flow from the drain and source. By adjusting the gate voltage, the size of the channel, and consequently the current, can be changed.

The IPB80N06S2L06ATMA1 features a rated drain-source breakdown voltage of up to 80V, a gate-source voltage of up to 20V and drain current of up to 25A. It is optimized for high-speed switching applications due to its low Capacitance and low ROL.

The device utilizes a super-junction structure to keep the on-resistance levels low and to provide outstanding dynamic characteristics. The IPB80N06S2L06ATMA1 has a low thermal resistance due to its advanced Package and is ideal for applications with high power dissipation.

The IPB80N06S2L06ATMA1 is designed to be used with logic level and gate drive ICs. When used with compatible logic level and gate drive ICs, the device can switch at high speeds, with low switching losses. The low gate to source threshold voltage (VGSth) ensures fast switching times and the low dynamic ‘body diode’ capacitance ensures the IPB80N06S2L06ATMA1 can be used in high frequency applications.

The IPB80N06S2L06ATMA1 is well-suited for use in automotive applications, such as motor control, power switching, and voltage and current level shifting. In addition, it is ideal for applications requiring low total gate charge and higher current handling, such as DC-DC converters, battery management systems, and data storage and transmission.

In summary, the IPB80N06S2L06ATMA1 is a high-voltage, high-current logic level N-channel MOSFET with low Capacitance and low ROL. It can be used in automotive applications such as motor control, power switching, and voltage and current level shifting, as well as data storage and transmission, DC-DC converters, and battery management systems. The device features a rated drain-source breakdown voltage of up to 80V, a gate-source voltage of up to 20V, and drain current of up to 25A, and is optimized for high-speed switching applications.

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