IPB80N04S2L03ATMA1

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The IPB80N04S2L03ATMA1 is a single-source enhancement metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is a three-terminal device composed of a metal oxide semiconductor that acts as an input resistance and voltage control. The metal oxide is formed by thin oxide films deposited on a suitably doped semiconductor substrate and is the main active region of the device.

The IPB80N04S2L03ATMA1 MOSFET has a wide range of applications, such as DC motor control, switching/power supply, audio power amplifiers and amplifier circuits. It can be used to control a variety of DC motor speeds, from low to high. The device also works well for applications where low input and low power loss are required, such as audio power amplifiers or amplifier circuits.

The IPB80N04S2L03ATMA1 MOSFET is designed to work in the enhancement mode, which means that it requires an DC input voltage in order to operate. When the gate voltage of the device is negative with respect to the source voltage, the device is "off" and it does not conduct. However, when a positive gate voltage with respect to the source voltage is applied, the current between the drain and source terminals increases.

The IPB80N04S2L03ATMA1 MOSFET works by allowing the current to flow through the channel between the source and drain terminals, when the gate voltage is positive with respect to the source voltage. This current is proportional to the applied gate voltage, and is known as the drain-source current. The current is limited by the resistance of the channel and by the threshold voltage. The threshold voltage is the minimum gate voltage which must be applied for the device to begin to conduct a current.

The IPB80N04S2L03ATMA1 MOSFET has a low-on resistance of 1.2 Ohms, a drain-source breakdown voltage of 80V and an average gate threshold voltage of 2.3V for efficient switching. The device is also very fast switching, with a turn-on and turn-off time of 150ns and 10ns respectively. The device also has a low capacitance between drain and source, which allows it to operate at high frequencies.

In summary, the IPB80N04S2L03ATMA1 MOSFET is an ideal device for applications such as DC motor control, switching/power supply, audio power amplifiers and amplifier circuits. Its low-on resistance and fast switching times make it a good choice for controlling a variety of DC motor speeds. Its low capacitance between drain and source also makes it suitable for use in high-frequency applications. The device is also reasonably priced, making it an attractive option for cost-sensitive applications.

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