IPB80N08S406ATMA1

Vgs(th) (Max) @ Id:	4V @ 90µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4800pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	70nC @ 10V
Series:	Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs:	5.5 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Article

IPB80N08S406ATMA1 application field and working principle

IPB80N08S406ATMA1 is a 80V N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) available in D2-PAK and TO-220 form factors. It is a single transistor designed for general purpose applications that require a high level of tolerance to the electrical parameters and a wide range of operating conditions. This article will explore the application field and working principle of this transistor.The IPB80N08S406ATMA1 is mainly used in DC to DC converters, AC/DC power supplies, class-D amplifiers, and switching applications. Its design gives it the ability to provide both low-on-state resistance and improved switching performance even at high loads. Its features also make it resistant to subthreshold leakage and temperature derating, allowing it to operate reliably in applications that require the highest level of power efficiency.The working principle of the IPB80N08S406ATMA1 involves four main components: the gate, source, drain, and body. The gate is used to control the flow of current from the source to the drain. When a positive voltage is applied to the gate, it attracts the electrons in the source, creating an inversion channel between the source and drain. This channel then allows current to flow from the source to the drain, thus turning the transistor “on.”In order to turn the transistor “off,” the voltage applied to the gate is removed. This removes the attraction of the gate’s source electrons and depletes them, blocking the current flow. The body of the transistor is grounded and remains stationary throughout the process.The IPB80N08S406ATMA1 has a wide range of operating conditions and can support applications that require a high level of tolerance to electrical parameters. These features make it an ideal choice for a wide range of applications, allowing it to work efficiently in various operating conditions. Furthermore, it has a very low on-state resistance and improved switching performance, allowing it to support high-powered systems that require a high degree of power efficiency.In conclusion, the IPB80N08S406ATMA1 is a 80V N-Channel MOSFET. It is generally used for DC to DC converters, AC/DC power supplies, class-D amplifiers, and switching applications. It has exceptional tolerance to electrical parameters and its on-state resistance is very low, enabling it to efficiently operate high-powered systems. The operating principle of the transistor involves the use of a gate, source, drain, and body, with the gate controlling the flow of current from the source to the drain.

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