IPB80N06S2LH5ATMA4

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	190nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	4.7 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPB80N06S2LH5ATMA4 is a MOSFET (Metal Oxide Semiconductor Field-effect Transistor) of the single type which means it has only one source, drain terminal and gate for controlling the device operation. The device is made of silicon but, in this particular MOSFET, all construction characteristics and materials used are highly sophisticated. Its purpose is to provide a low on resistance of 40 mΩ at low gate-drive conditions and can pass up to 28 A in pulsed mode of operation. MOSFETs are common electronic components utilized in both analog and digital circuits. Their main task is to amplify signals, and control power and current levels. As such, the IPB80N06S2LH5ATMA4 device can be applied in a wide range of applications.In audio amplifiers, the IPB80N06S2LH5ATMA4 can be used to switch devices like amplifiers on and off, allowing the amplifying task to be handled by other components of the system. Motor control systems can also benefit from such MOSFETs, as the device will permit power control from low power levels and provide amplification of the current throughout the system. Other areas of application for the IPB80N06S2LH5ATMA4 include motor intelligent controllers and lighting systems, where the device can provide an efficient response time and a high degree of control over the operation. The main principle behind this MOSFET is based on the electric field produced by a gate terminal that overpasses a semiconductor layer placed between the source and the drain. By properly attenuating the current injected in the gate, the electric field will invert the conductivity of the semiconductor layer, allowing current to pass from the source to the drain, mimicking a solid-state switch. Moreover, it is important to note that the IPB80N06S2LH5ATMA4 is a N-channel MOSFET, meaning that its gate will be grounded when the switch is open. If a P-channel MOSFET is desirable, one must carefully evaluate each model’s characteristics and see if it fits the needed operational requirements. In addition to the practical uses of this MOSFET, it is worth mentioning that by properly attenuating the gate current, it is possible to control both the frequency and the intensity of the current that passes through the device, making it suitable for use in a wide array of analog circuits. From the above, it is clear that the IPB80N06S2LH5ATMA4 has a wide range of applications and uses. Its low resistance and ability to pass up to 28 A makes it a viable choice for motor control, audio amplifiers and lighting systems, while its gate-controlled current makes it a valuable component for analog designs. With the proper selection between N-channel and P-channel MOSFETs, the IPB80N06S2LH5ATMA4 can provide a reliable and efficient current level control or switching, no matter the application area.

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