IPB80P04P4L08ATMA1 Allicdata Electronics
Allicdata Part #:

IPB80P04P4L08ATMA1-ND

Manufacturer Part#:

IPB80P04P4L08ATMA1

Price: $ 0.56
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH TO263-3
More Detail: P-Channel 40V 80A (Tc) 75W (Tc) Surface Mount PG-T...
DataSheet: IPB80P04P4L08ATMA1 datasheetIPB80P04P4L08ATMA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.50491
Stock 1000Can Ship Immediately
$ 0.56
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 75W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IPB80P04P4L08ATMA1 is a Power MOSFET (metal oxide semiconductor field-effect transistor) module from Vishay Siliconix. It is a single-cell, integrated Power MOSFET device used for increased performance and reliability in high-frequency switching applications. This MOSFET module is ideal for applications such as high-frequency switching and power management in consumer and industrial markets.

The device has a high power handling capability, with its high current carrying capacity and large die area enabling the device to handle larger loads than conventional MOSFETs. The device also features low resistivity, extremely low turn-on and turn-off times and improved electrical robustness. It is available in a small package, providing good thermal performance and high power dissipation.

Applications of IPB80P04P4L08ATMA1 include power management, high-frequency switching, power converter and voltage regulator control, and protection circuits. It is also used in consumer electronics, automotive and industrial applications. The device is designed for use in power converters, such as AC-DC and DC-DC, switching power supplies, automotive power management, and medium- and low-power audio amplification. It is suitable for applications requiring low power consumption, high efficiency and high frequency switching.

The working principle of the IPB80P04P4L08ATMA1 MOSFET module is based on the operations of the transistor\'s base junction. It has a very low on-resistance, allowing current to flow when the gate voltage is greater than the source voltage. When the gate voltage is less than the source voltage, the current cannot flow, resulting in the transistor switching off. This property of the transistor can be used to provide precise control over the supply of power to the load.

The device is equipped with internal circuitry to shut down the device automatically when fault conditions occur, enhancing the device\'s safety and reliability. The device is also protected from electrostatic discharge and overvoltage, providing increased protection against external events such as lightning.

The IPB80P04P4L08ATMA1 is an ideal solution for applications needing improved power control, efficacy and protection from external events. With its large die area, high current carrying capacity, low turn-on and turn-off times, and robustness, it is a reliable and reliable solution for power conversion, protection and high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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