IPB80P03P4L07ATMA1

IPB80P03P4L07ATMA1 application field and working principle

IPB80P03P4L07ATMA1 is a single N-Channel Enhancement Mode. This MOSFET is suited for high voltage, low current applications such as pulse power and battery charging. With a VDS value of 80V, the IPB80P03P4L07ATMA1 is suitable for a range of applications requiring high voltage, low current operation.

Description

IPB80P03P4L07ATMA1 is a P-channel enhancement mode MOSFET, designed using ST’s proprietary vertical DMOS technology which specifically offers Qg ratings and Ron saturation voltage, that enable easy system design optimization. With its maximum Drain-Source Voltage ranging up to 80V, 60A and 2.2 W of output power, this MOSFET is designed for protection and power applications such as lights dimming and battery charging, where high voltage, low current operation is desired.

IPB80P03P4L07ATMA1 includes a compound structure of P-channel MOSFET and parasitic N-channel E-MOSFET, which prevents the MOSFET body from being charged and also offers reverse drain voltage protection.

Features

• Maximum Drain-Source Voltage (VDS): 80V
• Continuous Drain Current at 25°C (ID): 60A
• Power Dissipation (Pd): 2.2W
• High Qg rating
• Built-in E-MOSFET
• Gold Metallization

Applications

• Light dimmers
• Reverse drain voltage protection
• Battery charging
• Motor control
• Pulse power output
• High-voltage, low-current applications

Working Principle

IPB80P03P4L07ATMA1 is an N-channel enhanced mode MOSFET. Its source and gate are placed on the same side of the device, which is connected to ground for better heat dissipation. The Drain side is connected to the load, providing the voltage and current to drive the load. The transistor works in a way that when the Gate voltage (Vg) is increased, the Drain-Source impedance decreases and more current starts to flow through the channel. This is known as the enhanced mode of operation, which provides very low on-state resistance and high power dissipation.

IPB80P03P4L07ATMA1 features a built-in Enhanced MOSFET (E-MOSFET), which helps in preventing the body voltage from being charged when the Drain voltage exceeds the Source voltage. This ensures the protection of the transistor in case of accidental high drain voltage and current. IPB80P03P4L07ATMA1 also offers very low on-state resistance in order to minimize power dissipation.

Conclusion

IPB80P03P4L07ATMA1 is an N-channel enhanced mode MOSFET, featuring a maximum Drain-Source Voltage of 80V, 60A of continuous drain current and 2.2W of power dissipation. It is ideal for applications requiring high voltage and low current such as pulse power output, light dimmers and battery charging. IPB80P03P4L07ATMA1 also features a built-in E-MOSFET which helps in providing reverse drain voltage protection, making it very suitable for protection applications. With its reliable design and excellent heat dissipation, IPB80P03P4L07ATMA1 is the perfect choice for high voltage applications.