IPB80N06S2L09ATMA2

Vgs(th) (Max) @ Id:	2V @ 125µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	190W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2620pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	105nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	8.2 mOhm @ 52A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPB80N06S2L09ATMA2 Application Field and Working PrincipleThe IPB80N06S2L09ATMA2 is a high-power MOSFET ( Metal-Oxide-Semiconductor Field-Effect Transistor) optimization-designed for high current and voltage applications. It’s the N-channel Enhancement Mode, with high-speed switching, anti-parallel parasitic body diode and low gate charge, offering low on-resistance, high current and voltage ratings, very low RDS (ON) and ultra-low Qg values.This type of transistor can be used in a variety of applications ranging from power supplies to amplifiers. It’s in-built with fast switching capabilities which is perfect for power supplies and other digital circuits. Additionally, it’s also ideal for driving motors, servos and relays, as well as for controlling AC applications.To understand how the IPB80N06S2L09ATMA2 works, one must first need to understand how transistors work in general. Metal-Oxide-Semiconductor Field-Effects Transistors (MOSFETs) are a type of transistor that are controlled by an electric field. They are similar to other transistors in that they are used to amplify or switch electronic signals.The MOSFET consists of a metal gate, an oxide layer and a semiconductor substrate. The gate is separated from the substrate by a very thin layer of oxide. When a voltage is applied to the gate, it produces an electric field. This electric field changes the characteristics of the semiconductor substrate and turns the MOSFET either “on” or “off”.It works by the application of voltage between the source and the drain, and the Gate and Source. When no voltage is applied to the Gate and Source, the transistor is “off”, nothing current flows between the source and the drain. When a voltage is applied, the transistor turns “on”, current flows through it.The IPB80N06S2L09ATMA2 also boasts high-speed switching capabilities, anti-parallel parasitic body diode, and low gate charge, offering low on-resistance, high current and voltage ratings, very low RDS (ON) and ultra-low Qg values. All this makes this type of MOSFET suitable for a number of different applications, such as switching power supplies, providing amplification for audio and video circuits, controlling AC power in applications like motors and relays, as well as for driving servo motors.In summary, the IPB80N06S2L09ATMA2 is a high-power MOSFET optimization-designed for high current and voltage applications. It has fast switching capabilities, low on-resistance, high current and voltage ratings, and excellent thermal management, making it suitable for a range of applications. It is also easy to use and its features make it ideal for digital circuits, motor drivers, and AC switching applications.

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