IPB80P04P4L04ATMA1

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The IPB80P04P4L04ATMA1 is a single enhancement mode (normally-off) power field effect transistor. It is constructed in a 4-pin Plastic-Encapsulated-Device (PED) package and using advanced Trench MOSFET technology and well-optimized design, provides excellent RDS(ON) and Low Gate Charge characteristics. This allows a smaller outline, as well as substantial efficiency and power density improvements over competitive N-channel parts. The low gate charge and low resistance in combination with the large package provide a reliable on/off switch for switching bulk loads from a small gate drive. These parameters may also enable higher operating frequencies and improved efficiency.

The IPB80P04P4L04ATMA1 is widely used in consumer, industrial and automotive applications. It can be used in induction cookers, electric water heaters, LED lighting, power supplies in computers, lamps, audio power amplifiers, and other electronic devices. Its uses include power switching applications such as load switching, DC/DC and AC/DC converters, half bridge configuration in motor drives. It can also be used in signal processing and signal switching applications, such as clock switching and switching in microprocessor-based devices. The device is also suitable for applications such as usb port protection, system power management, and power supply designs.

The IPB80P04P4L04ATMA1 works by applying a voltage to the gate to turn the transistor on or off, allowing or preventing the flow of current through the device. This device is normally off and the voltage on the gate is turned on to activate it. The amount of voltage required to activate it and the amount of current that can flow through it will depend on the specific characteristics of the device. The maximum current will be determined by the voltage on the source as well as the load.

The on-state drain to source resistance (RDS(ON)) is an important specification parameter which directly defines the power efficiency of the device. This low on-state resistance, combined with low gate charge, allows the device to handle high power levels in a small device without heat sink. This makes it suitable to be used in portable electronics and automotive applications.

The IPB80P04P4L04ATMA1 is primarily used as a switch and is commonly refered to as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It features a low on-state resistance, low gate charge, high on-state current and superior thermal performance. The device can also be used in switching Audio/Video applications such as telecommunications and digital signal processing. It is also suitable for high power industrial and automotive power switching applications. It offers an ideal combination of performance, cost, and size.

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