IPD025N06NATMA1

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IPD025N06NATMA1 is a single N-channel MOSFET produced by Infineon, in a PowerPAK SO-8 slim package recognized as P-Submini2-G-B. It has an integrated protection feature and low on-resistance. This MOSFET is a good choice for power management and circuit protection applications.

Application Field

IPD025N06NATMA1 MOSFET is suitable for load switch and driving applications, such as in power management circuits, audio amplifiers, and DC-DC converters. Due to its low equivalent gate charge, it is suited for high-frequency switching applications. It is also generally used in power supply applications, such as battery chargers, solar inverters, and voltage regulators.

The PowerPAK SO-8 slim package is used in automotive and industrial applications, as it has an integrated protection feature, is small in size, and provides corrosion resistance.

Working Principle

An N-channel MOSFET has three terminals, namely the gate, the source, and the drain. When it is not biased, it is in its OFF state, blocking current from flowing from the source to the drain. This happens as the gate-source channel is depleted of free charge carriers, so as to establish a potential barrier.

When the gate is biased, it attracts free charge carriers to it. As more charge carriers flow, a channel forms between the source and the drain, allowing current to flow. The total current flow depends on the gate-source voltage applied to the MOSFET. Higher voltage widens the region of the carrier flow, increasing current flow. It is this principle that makes an N-channel MOSFET suitable for power management and circuit protection applications.

IPD025N06NATMA1 MOSFET is an ideal choice for automotive and industrial applications due to its low on-resistance and integrated protection feature. This MOSFET is widely used in load switch and driving applications, as well as in power supply applications.

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