IPD048N06L3GBTMA1

Vgs(th) (Max) @ Id:	2.2V @ 58µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	115W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8400pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 4.5V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	4.8 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPD048N06L3GBTMA1 is a power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) device with a drain-source voltage of 48V and a drain current of 48A. This device is used in various application fields, such as inverters, power circuits, and battery management. In these application fields, the device is capable of switching high-voltage and high-current signals with high efficiency.The working principle of the MOSFET is based on the phenomenon of current flow in semiconductor materials. When a voltage is applied to a MOSFET, it creates an electric field within the device that attracts electrons from the source to the drain region. As the electrons flow from the source to the drain, a current is setup in the device. The strength of this current depends on the magnitude of the applied voltage, as well as the device properties.The operation of the IPD048N06L3GBTMA1 is governed by the gate-source voltage. This voltage controls the channel resistance between the source and the drain. When a positive voltage is applied to the gate, it causes the current flow to increase, resulting in an increase in the drain current. Conversely, when the voltage is negative, the current flow is limited, resulting in a reduced drain current.The IPD048N06L3GBTMA1 can be used in various applications, such as inverters, power circuits, and battery management. In inverters, the power MOSFET switches high-voltage and high-current signals with high efficiency. As the device is capable of operation at high frequencies, it can be used in high-frequency circuits. In power circuits, the MOSFET can be used for low-voltage and low-current switching for low-power applications. In battery management systems, the MOSFET is used to control the charging and discharging of batteries.Overall, IPD048N06L3GBTMA1 is a power MOSFET device with a drain-source voltage of 48V, a drain current of 48A and a gate-source voltage that controls the channel resistance between the source and the drain. This device is useful in various application fields, such as inverters, power circuits, and battery management. It can be operated at high frequencies and is capable of switching high-voltage and high-current signals with high efficiency.

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