IPD03N03LA G Discrete Semiconductor Products |
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| Allicdata Part #: | IPD03N03LAGINTR-ND |
| Manufacturer Part#: |
IPD03N03LA G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 25V 90A TO-252 |
| More Detail: | N-Channel 25V 90A (Tc) 115W (Tc) Surface Mount PG-... |
| DataSheet: |  IPD03N03LA G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 70µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | PG-TO252-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 115W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5200pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 5V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 60A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The IPD03N03LA G is a MOSFET transistor, which is designed to provide low on-state resistance along with low capacitance and gate charge, making it an ideal device for power management applications. The IPD03N03LA G is a single-channel field-effect transistor (FET) with an N−channel metal−oxide−semiconductor structure and a trench-gate field-effect structure. It is an ideal device for switching and low-level amplification due to its excellent switching characteristics and low gate charge.
Features
The IPD03N03LA G offers a number of advantages for power management applications, including:- Low drain-source saturation voltage
- Low gate charge
- Low input capacitance
- Low on-state resistance
- High gate-source and drain-source breakdown voltage
- High input impedance
Applications
The IPD03N03LA G can be used in a wide variety of power management applications, such as:- Power semiconductor modules
- Switching DC/DC converters
- Telecommunication remote nodes
- DC/AC inverters
- Motor controls
- Battery management
- Power window control
- HVAC systems
- Power steering
- Window defroster control
Working Principle
The IPD03N03LA G is a single-channel FET, which has an N-channel MOS structure. The device uses a trench-gate field-effect structure to allow for high input impedance and low gate charge. The device also has a low drain-source saturation voltage, which allows for fast switching action. When the gate voltage is greater than the threshold voltage, the device is in its on-state and a current can flow from drain to source. When the gate voltage is lower than the threshold voltage, the device is in its off-state and no current can flow. This allows the device to be used in switching applications, as well as low-level amplification applications.The IPD03N03LA G has an internal body diode which provides reverse conduction protection. An example of how this can be used is in a DC-DC converter where the FET is used to switch the voltage. When the voltage is switched, the diode provides protection to the device by allowing current to flow in the opposite direction as the FET is switched off.The specific data is subject to PDF, and the above content is for reference
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