IPD068P03L3GATMA1 Discrete Semiconductor Products

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The IPD068P03L3GATMA1 is a single-pole triple-throw normally-closed electrostatically controlled field effect transistor (FET). It is a robust, low-power FET that is ideal for portable electronic equipment, providing high-efficiency signal switching with low on-state resistance and low off-state leakage.

As one of the flagship transistors in the IPD single FET range, the IPD068P03L3GATMA1 is available in a variety of packages, and is one of the smallest package types available. Designed with a wide input voltage range and a low profile, this device is an ideal solution for applications where space is limited. The low capacitance is excellent for low-power applications, while the low on-state resistance further reduces power consumption. Furthermore, the IPD068P03L3GATMA1 features a robust junction temperature and positive temperature coefficient, making it well suited for use in high-temperature environments.

The IPD068P03L3GATMA1 has a simple working principle. Power is supplied to the FET\'s gate, which causes the conductivity between the drain and source of the FET to increase. The resulting current between the drain and source is proportional to the gate voltage, allowing for the precise control of current flow. The source of the FET is connected to ground, and the drain is connected to the load that is being switched on and off. This mechanism allows for bidirectional control of the load. When the gate is not supplied with any power, the FET is off, and no current passes through the load. Applying power to the gate causes the FET to switch ‘on’, allowing current to flow through the load.

The IPD068P03L3GATMA1 is ideal for applications such as switching between multiple power sources, voltage regulation, and auto-ranging. It is commonly used in battery-powered devices, automotive electronics, telecommunication systems, wireless networks, and other electronic equipment where high-efficiency low-power switching is needed. This device is also suitable for use in patient monitoring systems, prosthetic devices, and medical implants, as it is capable of regulating current in small packages.

The IPD068P03L3GATMA1 is designed to provide reliable performance in even the most extreme environments. It features high breakdown voltage, low gate threshold voltage, and low RDSon, making it an excellent choice for cost-sensitive applications. Additionally, this FET has an ultra-low on-state resistance, which makes it ideal for high-frequency switching applications. The IPD068P03L3GATMA1 is rated for operation up to 125°C, making it an excellent solution for harsh industrial and automotive applications.

In summary, the IPD068P03L3GATMA1 is a robust, low-power FET that is ideal for use in portable electronic equipment, battery-powered devices, automotive electronics, and other electronic equipment. It provides high-efficiency, low-power switching with low on-state resistance and low off-state leakage. With its wide input voltage range and low profile, this FET is an ideal solution for applications where space is limited. Furthermore, it is rated for operation up to 125°C, making it an excellent choice for high-temperature applications.

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