IPD031N03M G Discrete Semiconductor Products |
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Allicdata Part #: | IPD031N03MGINTR-ND |
Manufacturer Part#: |
IPD031N03M G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 90A TO252-3 |
More Detail: | N-Channel 30V 90A (Tc) Surface Mount PG-TO252-3 |
DataSheet: | IPD031N03M G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5300pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The IPD031N03M G transistor is a type of the Field Effect Transistor (FET), which is widely used in the modern electronic world due to its various advantages, such as high input impedance, low noise and low power consumption. This particular model is a single MOSFET, meaning it contains one gate. FETs, including this one, are used in various applications that require precise control of current, such as switching, driving motors and amplifying signals. The IPD031N03M G is made of metal-oxide-semiconductor (MOS), and so they are usually referred to as metal-oxide-silicon transistors, or MOSFETs.The IPD031N03M G transistor has a number of unique features that make it an attractive choice for certain applications. First, it has a high input impedance, making it ideal for amplifiers and low noise circuits. Second, the gate has a relatively low power consumption, allowing for a long battery life for products incorporating this transistor. Finally, the IPD031N03M G has a very low “on-state” resistance, or RDS, which makes it ideal for low-power, high-current applications such as motor control.In order to understand how the IPD031N03M G transistor works, a basic understanding of FETs is required. A FET works by using an electric field to control the flow of current through a channel. This is accomplished by using a negative voltage applied to the gate, which creates an electric field that interacts with the electric field created by the source and drain. This interaction sets up a conductive channel between the source and drain, allowing current to flow. When the applied voltage is removed, the channel is “on” and current can flow; when the applied voltage is increased, the channel is “off” and current cannot flow.The IPD031N03M G transistor has many applications due to its unique features. It is commonly used in switching applications, where its low power consumption and fast switching speed make it a popular choice. It is also used in amplifiers, where its high input impedance makes it ideal for low noise circuits. Finally, it is often used in motor control circuits, where its low resistance allows for precise control of current.In conclusion, the IPD031N03M G transistor is a single MOSFET that has numerous advantages over other types of transistors. Its unique features, high input impedance and low power consumption, make it an attractive choice for applications such as switching, amplifiers and motor control. By understanding how the IPD031N03M G transistor works, one can appreciate its various applications and why it is a popular choice for various electronic devices.
The specific data is subject to PDF, and the above content is for reference
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