IPD06N03LA G Allicdata Electronics

IPD06N03LA G Discrete Semiconductor Products

Allicdata Part #:

IPD06N03LAGINTR-ND

Manufacturer Part#:

IPD06N03LA G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 50A DPAK
More Detail: N-Channel 25V 50A (Tc) 83W (Tc) Surface Mount PG-T...
DataSheet: IPD06N03LA G datasheetIPD06N03LA G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 40µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Introduction

IPD06N03LA G is a type of field effect transistor (FET) with a single structure, specifically, a metal-oxide-semiconductor field-effect transistor. It is also known as MOSFET or simply FET. This device is used to control the current and power consumption of an electrical circuit, by providing a constantly changing resistance to the flow of current.

Working principle

The IPD06N03LA G, like other FETs, is based on the principle of the electric charge carrier (or carriers) in the channel between source and drain. The control voltage VGS applied at the source and the gate effectively changes the width and resistance of the channel, thus controlling the flow of current. When the gate voltage is increased, it effectively changes the electrons’ mobility in the channel, reducing the amount of current that can flow through the device. This changes the resistance in the channel, reducing the amount of electrical power consumed by the circuit in the process of current flow.When the IPD06N03LA G is used in a circuit, current will flow between the source and drain when a voltage is applied. The resistance between source and drain depend on the control voltage VGS. Generally, when the voltage applied is between 0V and 2.5V, the channel resistance is high, resulting in high electrical power consumption of the circuit. Variations of 2.5V and above will reduce the channel resistance, reducing the power consumption and increasing the efficiency of the device.

Application field

The IPD06N03LA G is mainly used for power switching or power control applications, where low power loss is required. It is suitable for applications including DC-DC converters, motor control circuits and various types of switching applications.Some of its most notable uses are in the control of relatively high-frequency power supplies and other power control applications. For example, it is often used in motor control circuits, where the IPD06N03LA G is used to control the speed and efficiency of a motor, or as part of a closed-loop feedback circuit, where the device is used to adjust the amount of current supplied to the motor in order to maintain a constant output rate.The IPD06N03LA G is also widely used in switching applications, where it is used to provide a fast switching action with high efficiency. It can be used in applications such as digital logic circuits and switching power supplies, where the device is needed to turn on or off a circuit quickly and efficiently. Another common use of the IPD06N03LA G is in audio amplifiers and other audio applications, where it is used to provide a soft-start or zero-crossing feature. Finally, the IPD06N03LA G can also be used in other power-related applications such as Heating, Ventilation and Air Conditioning (HVAC) systems, as well as in other industrial applications.

Conclusion

To sum up, the IPD06N03LA G is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) with a single structure, specifically, a FET. It is used mainly to control the current and power consumption of an electrical circuit, by providing a constantly changing resistance to the flow of current. The IPD06N03LA G is mainly used for power switching or power control applications, including DC-DC converters, motor control circuits, digital logic circuits and switching power supplies, as well as in other industrial applications. It is a very useful and efficient device in electrical and electronic applications due to its wide range of applications and low power-loss characteristics.

The specific data is subject to PDF, and the above content is for reference

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