IPD042P03L3GBTMA1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

An IPD042P03L3GBTMA1 is a single junction field effect transistor (FET) designed for high power, small signal applications. It is a MOSFET device constructed from a high-density gallium nitride (GaN) substrate for the gate and an adjacent silicon-on-insulator (SOI) substrate for the drain and source. The device is rated for a power level of 60W and a voltage of 50V. It is used in high frequency switching and amplifier applications.

A field effect transistor (FET) is a type of transistor that uses an electric field to control current. It consists of three terminals — the source, gate, and drain. Where a traditional bipolar junction transistor (BJT) uses a base to control the flow of current through the device, an FET uses the electric field generated by the gate voltage to control the current. This makes FETs ideal for high frequency switching and amplifier applications.

When an external voltage is applied to the gate of the IPD042P03L3GBTMA1, it generates an electric field between the gate and the source. This electric field changes the conductivity of the channel between the source and drain, allowing current to flow. The amount of current that flows is dependent on the voltage applied to the gate. The threshold voltage is the minimum voltage required to turn the device on, and the breakdown voltage is the maximum voltage the device can withstand before being damaged.

IPD042P03L3GBTMA1 has a low on-resistance of 0.42Ω and can handle up to a maximum drain current of 30A. It is recommended to limit the drain-source voltage to 50V and the gate-source voltage to 6V. An advantage of this device is its fast switching speed, with a typical rise/fall time of 15ns. This makes it suitable for high speed switching applications.

The IPD042P03L3GBTMA1 is widely used in a variety of applications. It is used in high-power amplifiers, motor control circuits, and power converters. It is also used in automotive audio systems, industrial control systems, and medical equipment. The device is also used in power converters for charging and discharging batteries.

The IPD042P03L3GBTMA1 is a versatile device with a wide range of applications. With its high power and fast switching speed, it is an ideal choice for power conversion and control. The low on-resistance, low threshold voltage, and high breakdown voltage make it suitable for a variety of power amplification and switching applications.

The specific data is subject to PDF, and the above content is for reference