IPD075N03LGBTMA1

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3-11
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	47W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1900pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	7.5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The IPD075N03LGBTMA1 is a single-chip N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). As a type of field-effect transistor, it uses electrical charge flowing through one or more semiconductor layers to control current flow through the device. This MOSFET offers a voltage range of 6V to 12V and a current rating of 75A, with a low on-resistance, making it an ideal choice for a variety of applications.The IPD075N03LGBTMA1 is generally used in power switching applications, such as in motor control, relays, and audio amplifier circuits. It is also used in other power management applications, such as in DC/DC converters, power adapter circuits, battery protection circuits, and voltage regulators. In addition, this MOSFET can be used in USB power management circuits, power supply units, and lighting ballast circuits.The IPD075N03LGBTMA1 employs a vertical type construction, which features an optimized three-dimensional structure that eliminates the need for an inter-layer gate oxide. This helps to improve the reliability of the device and reduce on-resistance. It also features a low gate charge and ultra-low input capacitance, making it suitable for high-speed operations.The working principle of the IPD075N03LGBTMA1 is based on the electrical field effect. Under forward current flow, a voltage applied to the gate will create a distorted electrical field on the semiconductor layers that form the surface of the MOSFET. This electrical field will then attract electrons from the source to the drain, allowing current to flow through the MOSFET. The amount of current that can flow through the device is determined by the voltage applied to the gate.The IPD075N03LGBTMA1 is a robust and reliable MOSFET, making it an ideal choice for a variety of power switching and power management applications. With its excellent current rating and low on resistance, it is well-suited for use in motor control, relays, audio amplifier circuits, DC/DC converters, power adapter circuits, battery protection circuits, voltage regulators, USB power management circuits, power supply units, and lighting ballast circuits.

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