IPD088N06N3GBTMA1

The IPD088N06N3GBTMA1 is a high-voltage N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used in circuits for a number of different application fields. This device has a wide range of uses, ranging from power management and motor control to audio amplifier, load switching, and automotive systems.

This particular MOSFET has an impressive operating range. It has a drain current of up to 18A and a drain-source voltage of up to 80V. It has a drain-source on-resistance of 0.088 ohms and an upper gate threshold voltage range of 4.5V-6V. In addition, it has a total gate charge of 8nC and an ultra-low gate input capacitance of just 240pF.

The IPD088N06N3GBTMA1 has a number of features that make it a great choice for many different applications. The first is its low on-resistance, which makes it suitable for high-current applications. Furthermore, it has an excellent thermal performance, thanks to its low thermal resistance (1.9°C/W). Additionally, it has a low gate charge and high transconductance, which is highly desirable for audio amplifier and motor control applications. Finally, its wide operating voltage range makes it suitable for a broad range of uses.

In terms of its working principle, this MOSFET is based on the same principles as any other MOSFET. It uses an insulated gate that is connected to the source and acts as a switch. By changing the voltage on the gate, it is possible to control the flow of current through the device. This is done by using a voltage source to control the gate voltage and thus the current flow through the device.

The IPD088N06N3GBTMA1 is a versatile and powerful MOSFET that is suitable for a wide range of application fields. Its high current rating, low gate charge, and wide operating voltage make it a great option for audio amplifiers, motor control circuits, load switching, and automotive systems. Furthermore, it has an impressive thermal performance and an intuitive working principle, making it an attractive option for many applications.