IPD082N10N3GATMA1

The IPD082N10N3GATMA1, which belongs to the category of transistors - FETs, MOSFETs - single, is a device unto itself. It is a semiconductor component that can provide electrical and/or magnetic isolation, as well as conducting electrical signals. As a type of Field Effect Transistor (FET), the IPD082N10N3GATMA1 is used for numerous industrial and consumer applications.

Application Field

The IPD082N10N3GATMA1 is used in power management applications, such as voltage regulation and supply sequencing. It is ideal for use in automotive applications and in industrial equipment. The component is also employed in analog switching circuits and digital switching circuits, and can be found in other applications, such as motor control and LED lighting.

Working Principle

The IPD082N10N3GATMA1 is a lateral P-channel enhancement mode power MOSFET. It operates on the principle of MOSFET transistor biasing, wherein the gate-source voltage of the device is used to manipulate its output voltage, also known as its drain-source voltage. This MOSFET transistor biasing is a form of voltage control and it provides an analog switch.

Bias conditions determine the amount of current that can flow from the device\'s drain to its source. The IPD082N10N3GATMA1 is an enhancement mode device. When biased in the enhancement mode, a positive voltage is applied to the gate, which increases the current flow from the device\'s drain to the source, thus turning the device \'on\'.When the gate-source voltage is less than the threshold voltage, the device is \'off\'. This MOSFET has an R_DS(ON), which is the small signal drain-source resistance when the device is conducting.

Features

The IPD082N10N3GATMA1 is an ultimate complement to other IPD MOSFETs. It has a wide package range, low on-resistance, and low gate charge. The device boasts a maximum voltage of -100 V and a maximum drain current of -8A. Its input capacitance for the device is 2100 pF and its gate charge is 95 nC typical. The drain-source breakdown voltage of this device is -100 V and its maximum RDS(on) is 55 mΩ. Its junction-to-case thermal resistance is 9.7 °C/W. The thermal resistance of this device is excellent, as well as its high speed switching capabilities, making it an ideal choice for high speed switching applications.

Advantages

The IPD082N10N3GATMA1 is an ideal choice for power management applications due to its superior electrical and thermal characteristics. The device offers superior electrostatic discharge performance, low on-resistance and low gate charge characteristics for improved switching efficiency. It also offers exceptional common-mode noise and EMI/RFI noise rejection, making it an ideal choice for industrial and automotive applications. In addition, the device is capable of withstanding a high junction-to-case thermal resistance for greater reliability and improved thermal performance.

Conclusion

The IPD082N10N3GATMA1 is an excellent Field Effect Transistor (FET) that is used in numerous applications. It offers superior electrostatic and EMI/RFI noise rejection, as well as improved switching efficiency and low on-resistance and gate charge characteristics. The IPD082N10N3GATMA1 is an ideal choice for power management applications and is an ultimate complement to other IPD MOSFETs.