IPD068N10N3GBTMA1 Allicdata Electronics
Allicdata Part #:

IPD068N10N3GBTMA1TR-ND

Manufacturer Part#:

IPD068N10N3GBTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 90A TO252-3
More Detail: N-Channel 100V 90A (Tc) 150W (Tc) Surface Mount PG...
DataSheet: IPD068N10N3GBTMA1 datasheetIPD068N10N3GBTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IPD068N10N3GBTMA1 application field and working principle

IPD068N10N3GBTMA1 is one of the most advanced transistors available today. It is a type of MOSFET, which stands for Metal-Oxide-Semiconductor Field Effect Transistor. This type of transistor has the ability to control a high current yet small voltage, allowing it to be used in applications where large amounts of current are needed and where space is limited.

The IPD068N10N3GBTMA1 is a high-voltage transistor with an integrated driver. It also has an impressive current rating of 68A and a voltage rating of 1000V. This makes it an ideal choice for a variety of applications, such as power conditioning, rectifier control, switch mode power supplies, and high voltage rectifiers.

The IPD068N10N3GBTMA1’s integrated driver allows it to control large currents with a much higher efficiency than standard transistors. This lets it outlast standard transistors in applications that require longer periods of operation. This also makes the IPD068N10N3GBTMA1 well-suited for circuit protection, as it can utilize its low resistance at high voltage and current levels to eliminate power losses.

The working principle of the IPD068N10N3GBTMA1 is quite simple. The transistor has three pins – gate, source, and drain – and a body that acts as an insulator. When voltage is applied to the gate, the transistor will switch from off-state to on-state. This allows current to flow through the transistor, which is then directed to where it needs to go.

The IPD068N10N3GBTMA1 is a versatile transistor that can be applied in a variety of ways. It is mainly used in high voltage applications involving circuit protection and power conditioning. It can also be used for DC motor control, motion control, and H-bridge designs. Some of the more common uses of IPD068N10N3GBTMA1 are in rectifier control, motor control, and H-bridge applications.

Overall, the IPD068N10N3GBTMA1 is a reliable, efficient, and powerful transistor. Its high current rating and simple operation make it an ideal choice for applications that require the most effective and reliable transistors available. Whether it is used for circuit protection, power conditioning, or motor control, the IPD068N10N3GBTMA1 is sure to help you achieve your desired outcome.

The specific data is subject to PDF, and the above content is for reference

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