IPD060N03LGBTMA1 Allicdata Electronics
Allicdata Part #:

IPD060N03LGBTMA1-ND

Manufacturer Part#:

IPD060N03LGBTMA1

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 50A TO252-3
More Detail: N-Channel 30V 50A (Tc) 56W (Tc) Surface Mount PG-T...
DataSheet: IPD060N03LGBTMA1 datasheetIPD060N03LGBTMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.23521
Stock 1000Can Ship Immediately
$ 0.26
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 56W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IPD060N03LGBTMA1 Application Field and Working Principle

IPD060N03LGBTMA1 is an n-Channel Power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) that has various functional applications, such as in commercial solid-state relays, power conversion, control circuits, consumer electronics, telecom, and industrial automation. Specifically, this device belongs to the “Single” class of MOSFETs, which indicates a single MOSFET that has its source, gate, and drain all connected to the outside world and behaves like a single switch.

A MOSFET is an active electronic device that consists of a semiconductor material sandwiched between a voltage source and a control gate. It has three pins: Drain (D), Source (S), and Gate (G). The gate controls the opening and closing of the switch, thus allowing or blocking current (electrons) flowing among the pins. When the voltage applied to the gate reaches its “threshold voltage”, the MOSFET will open (or turn “ON”) and allow electrons to flow through its Drain and Source pins.

The IPD060N03LGBTMA1 has several special characteristics that make it a useful device in certain applications. For starters, it has a low “on-resistance”, or the resistance between the Source and Drain when the device is in “ON” posture. This makes it ideal for low-voltage and low-power applications, especially for switching high-frequency signals.

Moreover, the IPD060N03LGBTMA1 consumes very low gate-drive current since its gate is driven by low voltages and not directly by current. This makes it a great choice for applications which require low power consumption. Furthermore, its maximum drain source voltage rating of 60V can handle most of the standard DC voltages without issue, hence it can be used in applications with a wide range of supply voltage.

In addition, the IPD060N03LGBTMA1 is also very fast switching, allowing it to control power efficiently; and its maximum current rating of 30A makes it suitable for switching industrial loads.

Overall, the IPD060N03LGBTMA1 is an excellent choice for low-voltage, low-power applications such as solid-state relays, consumer electronics, and telecom. Its small size, large current rating, and low “on-resistance” make it an ideal device for controlling current in various applications.

The specific data is subject to PDF, and the above content is for reference

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