Allicdata Part #: | IPD090N03LGBTMA1-ND |
Manufacturer Part#: |
IPD090N03LGBTMA1 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 40A TO252 |
More Detail: | N-Channel 30V 40A (Tc) 42W (Tc) Surface Mount PG-T... |
DataSheet: | IPD090N03LGBTMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.17470 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD090N03LGTMSA1 is a MOSFET transistor that can be used in a multitude of different circuit applications, and it is important to understand how it works and how it can be used. The purpose of this article is to provide an overview of the use of this transistor and its working principle.
The IPD090N03RPGTMSA1 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is an enhancement-mode Field-Effect Transistor (FET) that is commonly used in electronic circuits due to its low voltage, high current, and low capacitance attributes. The low voltage, high current, and low capacitance makes it ideal for high-speed switching applications such as in integrated circuit (IC) designs.
In its most basic form, a MOSFET has three terminals: the source, the drain, and the gate. The source is the entrance for electrons, the drain is where the electrons leave the transistor, and the gate controls the flow of electrons between the two, similar to a valve. To activate the transistor, the voltage applied to the gate must be greater than the source-drain voltage. When this happens, current is able to flow between the source and the drain.
The IPD090N03LGTMSA1 is a single-level field-effect transistor, meaning it has only one active conducting level. This active conducting level is called the P-Channel, which is where electrons enter the transistor. The transistor is designed to be very efficient in higher voltage and current applications, with low on-state resistance and high current ratings. This allows for higher switching speeds with minimal power loss.
In circuit applications, the IPD090N03LGTMSA1 is used as a switch. When the transistor is in the off state, the voltage applied to the gate will be zero, which will prevent current from flowing between the source and the drain. However, when the correct voltage is applied to the gate, the transistor will be on and current will be allowed to flow.
The IPD090N03LGTMSA1 is also capable of being used in high-frequency applications. This is because it has a very low capacitance, meaning it is able to switch at very high frequencies without introducing any unwanted noise. This property makes it ideal for use in high-speed digital circuits.
The IPD090N03LGTMSA1 is a powerful transistor that can be used in a variety of applications. It is commonly used as a switch in high-speed digital circuits, as well as in analog circuits. Its low capacitance and high current ratings make it well suited for high-frequency applications, and its low on-state resistance allows for high switching speeds with minimal power loss.
The specific data is subject to PDF, and the above content is for reference
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