IPD082N10N3GBTMA1

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The IPD082N10N3GBTMA1 transistor is part of a family of insulated-gate bipolar transistors (IGBTs) that have the combination of the properties of field-effect transistors (FETs) and bipolar transistors. This IPD082N10N3GBTMA1 in particular is a N-channel, enhancement-mode transistor with a blocking voltage capability of 800V.

This IPD082N10N3GBTMA1 transistor is mostly used in applications requiring low on-resistance and fast switching times. It is useful for driving electromechanical and multiple load applications such as AC motors, DC motors, solenoids, lighting, and heating. It is also useful for applications that must withstand high voltage pulses such as regenerative braking circuits and power converters.

The transistor is a semiconductor device with three terminals consisting of the source, drain, and gate that controls the current between the source and drain. As the voltage on the gate increases, a channel forms between the source and drain. The majority of the current flows through this channel, while the drain current is extremely small. When the voltage on the gate is decreased, the channel is extinguished and current flow is blocked.

An example circuit connection for the IPD082N10N3GBTMA1 transistor is the half bridge circuit. In this application, the transistor is used to drive the gate of an IGBT, which in turn controls the current flow within the circuit. The IGBT gate is typically supplied with 10V to 20V, where the IPD082N10N3GBTMA1 transistor supplies the gate voltage. This circuit connection is used in applications such as motor control and power converters.

The most notable feature of the IPD082N10N3GBTMA1 transistor is its ability to withstand high voltage pulses up to 800V. This voltage blocking capability is achieved by controlling the amount of current passing through the gate in relation to the voltage across the device. This device is also capable of carrying drain currents of up to 8A, making it suitable for applications that require high current loads. The device is rated to operate at junction temperatures as high as 150°C.

Finally, this IPD082N10N3GBTMA1 transistor is packaged in a 5-pin TO-220 package, measuring 4.3mm (0.17in) x 4.3mm (0.17in) x 6.5mm (0.26in) in size. This package offers easy installation and facilitates good thermal transfer when installed on a heatsink. The device is also compatible with most standard mounting options and is RoHS compliant.

The IPD082N10N3GBTMA1 transistor is an excellent choice for applications requiring large switching currents, low on-resistance, and high blocking voltage capability. This device is well suited for AC motor control, DC motor control, solenoids, lighting, heating, and power converters that must withstand high voltage pulses. The device comes in a convenient 5-pin TO-220 package and is RoHS compliant, making it a great choice for almost any application.

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