IPD088N04LGBTMA1

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The IPD088N04LGBTMA1 is a single N-channel enhancement mode MOSFET developed by Infineon. This MOSFET is an advanced level of efficiency while providing excellent thermal characteristics, wide gate-source voltage range, and low gate resistance. This device is a cost-effective solution for various industrial and consumer applications with a wide range of temperature, speed, and power requirements.

This MOSFET has a wide range of applications in the industrial and consumer markets. For industrial applications, it is commonly used for power management, such as switching, and for system control. It is also used for consumer applications such as DC-DC converters, constant current sources, and regulator circuits. Additionally, it can also be utilized in high-input voltage range switching applications like in AC power adapters, solar power inverters, and battery chargers.

The IPD088N04LGBTMA1 is an enhancement MOSFET which operates with an N-channel carrier conduction. The N-channel refers to the type of the channel formed when an electric field is applied to the MOSFET which is formed by the depletion layer on the drain side of the PN junction. In N-channel MOSFETs, the majority carriers are electrons and the minority carriers are holes. The directional arrow on the symbol of this MOSFET denotes the flow of the electrons from the source to the drain.

The working principle of this MOSFET mainly consists of three parts: the gate electrode, the source electrode, and the drain electrode. When an electric field is applied to the gate electrode, an electric field develops at the PN junction formed between the source and the drain region. This increases the electrical insulation of the PN junction and the electrons are attracted towards the gate electrode. The electrons then flow through the channel formed by the PN junction and cause a fall in the resistance of the channel. This results in the flow of current between the source and the drain. Thus, current flow between the source and the drain is controlled by the gate voltage.

The IPD088N04LGBTMA1 has a ultra-low gate resistance (Rg) of 3.8 mW, a maximum drain-source on-state resistance (RDS) of 0.0085 Ohms, and a drain-source voltage breakdown rating of 20V. The fast switch times, superior thermal performance, and low on-state resistance provided by this MOSFET make it perfect for applications that draw high currents. Additionally, it has been designed for excellent reliability in the most severe conditions, making it the ideal choice for use in industrial and consumer applications.

In summary, the IPD088N04LGBTMA1 is a high performance enhancement mode N-channel MOSFET which features a wide range of applications, a low gate resistance, and a high current rating. It is a cost-effective solution for various industrial and consumer applications, such as DC-DC converters and regulator circuits. Its fast switch time, superior thermal characteristics, and reliable performance make it a great choice for those who require a high-efficiency and powerful electronic device.

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