IPD053N06NATMA1

Vgs(th) (Max) @ Id:	2.8V @ 36µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3W (Ta), 83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2000pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	5.3 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	18A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPD053N06NATMA1 application field and working principle

IPD053N06NATMA1 is an advanced power MOSFET from Infineon Technologies. It features an extremely low on-resistance and is optimized for high-current, hard-switching applications. It is extremely robust to withstand sudden changes in the load and is ideal for applications such as switched-mode power supplies and other hard switching applications.

Features

The IPD053N06NATMA1 is a 30V enhancement mode, surface mount, N-channel MOSFET. It is designed to provide high current and low on-resistance while withstanding high voltage. The device is available in a variety of package styles and allows for a wide range of applications. A few of its key features are: * Low on-resistance: 0.011 Ohms * Current rating: 10.5A* Maximum power dissipation: 225W* Maximum drain current: 10.5A* Maximum drain-source voltage: 30V* Operating temperature range: -55°C to +175°C

Applications

Due to its low on-resistance and robustness, the IPD053N06NATMA1 is suitable for use in a variety of applications such as: * AC-DC power converters * DC-DC power converters * High-power LED drivers * SMPS * Motor controls * Uninterruptible power supply

How does MOSFET work?

MOSFETs, or metal-oxide-semiconductor field-effect transistors, are three-terminal devices that are voltage-controlled switches. They are used in power electronics to provide very high-current on/off control. MOSFETs consist of four active layers: source, drain, gate, and body. The source and drain are two terminals between which the current flows when the transistor is turned on. The gate is the control terminal and the body is the substrate or semiconductor material the transistor is built on. The operation of the MOSFET is based on the principle of “the majority carriers carry the current”. When there is a negative voltage applied to the gate, a depletion region is created in the channel area between the source and the drain. This creates insulation between them, preventing the current from flowing. When a positive voltage is applied to the gate, the negative ions are attracted towards the gate, widening the channel and allowing the majority carriers (electrons or holes) to pass from the source to the drain. Thus, the MOSFET is turned on. When the gate voltage is switched off, the opposite effect takes place and the channel is narrowed, blocking the majority carriers from passing through it and allowing the MOSFET to turn off.

Conclusion

The IPD053N06NATMA1 is an advanced power MOSFET from Infineon Technologies. It is designed to deliver low on-resistance and high current while also being able to withstand high voltages. It is ideal for use in a variety of applications such as AC-DC converters, DC-DC power converters, LED drivers, motor controls, and uninterruptible power supplies. The device achieves its remarkable performance by using the principle of “majority carriers carry the current” whereby the source and drain regions are “switched on” or “off” depending on the voltage applied to the gate.

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