IPD038N04NGBTMA1 Discrete Semiconductor Products

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The IPD038N04NGBTMA1 is a single-channel high-side PowerTrench MOSFET. It is a family of N-Channel power transistors that are used in several applications. These transistors feature a low on-resistance, wide temperature range, and high temperature operating voltage. This makes them ideal for applications that require a high power efficiency, high frequency switching, and wide temperature range.

The PowerTrench MOSFETs are designed for applications that require low voltage, high current and ultra-fast switching. These transistors are also suitable for applications that require high frequency operation, such as high-speed servers and data centers. Additionally, they are capable of handling high switching frequencies and high-power dissipation.

The MOSFETs\' working principle is simple. When a positive gate voltage is applied to the gate, a channel opens between the source and drain. This allows current to flow from the source to the drain. When a negative gate voltage is applied, the channel closes, stopping the current flow. This process is controlled by the gate voltage and is a very efficient way of controlling the current.

In general, IPD038N04NGBTMA1 is suitable for switching and SMPS applications. It can also be used in DC-DC converters, inverters, power supply equipment, and more. The MOSFETs\' gate-source voltage and drain-source voltage allows circuit designers to regulate the power states. This makes them useful in applications that require precise power control.

The transistors can handle medium- to high-power loads and provide stable performance across wide temperature ranges. In addition, they are capable of dissipating up to 6W of power, making them suitable for applications that require high power dissipation. Additionally, their low on-resistance allows for a wide range of operating frequencies.

The IPD038N04NGBTMA1 is a versatile PowerTrench MOSFET that can be used in a variety of applications. Its low on-resistance, high temperature operating voltage, and wide temperature range make it an ideal choice for applications that require precise power regulation. Furthermore, its high frequency switching capability and high power dissipation make it suitable for applications that require fast response times and large amounts of power.

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