Allicdata Part #: | IPD090N03LGATMA1TR-ND |
Manufacturer Part#: |
IPD090N03LGATMA1 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 40A TO252-3 |
More Detail: | N-Channel 30V 40A (Tc) 42W (Tc) Surface Mount PG-T... |
DataSheet: | IPD090N03LGATMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.17470 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IPD090N03LGATMA1 is a developed transistor, which belongs to the FETs and MOSFETs category, and is classified as a single type. TMA1 is a mechanical abbreviation of the Toshiba Corporation, which is a well-recognized semiconductor manufacturer. The IPD090N03LGATMA1 series is a high-performance device, featuring a low on-resistance, an extra-low gate charge, and a high current rating.
The IPD090N03LGATMA1 application field comprises power switching operations such as in hard drives, motor drivers, and peripheral computer components. It is widely used in motion control, light applications, and industrial systems for switching as well as for controlling current flow. Besides, it can be used in a wide variety of vehicles, such as automobiles, boats, and planes. Furthermore, IPD090N03LGATMA1 is used in electronic gadgets and appliances, including televisions, cellphones, and ovens.
IPD090N03LGATMA1 is a three-terminal device that works on the principle of modulation of drain-source current. It operates in the enhancement mode, where the drain-source can flow freely even when the gate-source voltage is zero. This device also has an extra -low gate charge, which helps reduce conduction losses effectively and ensures low power consumption. Moreover, the IPD090N03LGATMA1 series has a high current rating, allowing it to withstand highly dynamic applications. This series is also environmentally friendly, meeting RoHS standards.
The IPD090N03LGATMA1 packaging comprises either TO-220AB package or DPAK. The TO-220AB package is popular for power applications, whilst the DPAK is ideal for smaller, higher-density applications. This device is also available in surface mounting for a more compact package and for higher thermal conductivity. Moreover, the IPD090N03LGATMA1 series has a number of features that make it suitable for today\'s power applications, such as an advanced process design, high reliability, and high break-down voltage.
In conclusion, IPD090N03LGATMA1 is a high-performance transistor that operates in the enhancement mode, where drain-source current flows freely even when the gate-source voltage is zero. This device is widely used in power switching operations such as hard drives, motor drivers, and peripheral computer components. It is also used in a wide variety of vehicles, electronic gadgets, and appliances. IPD090N03LGATMA1 has an extra-low gate charge, a high current rating, and meets RoHS standards. Furthermore, it is available in TO-220AB and DPAK packages, as well as in surface-mounting packages.
The specific data is subject to PDF, and the above content is for reference
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