IPD60R750E6ATMA1 Allicdata Electronics
Allicdata Part #:

IPD60R750E6ATMA1-ND

Manufacturer Part#:

IPD60R750E6ATMA1

Price: $ 0.47
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 5.7A TO252
More Detail: N-Channel 600V 5.7A (Tc) 48W (Tc) Surface Mount PG...
DataSheet: IPD60R750E6ATMA1 datasheetIPD60R750E6ATMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.42141
Stock 1000Can Ship Immediately
$ 0.47
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 373pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Series: CoolMOS™ E6
Rds On (Max) @ Id, Vgs: 750 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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IPD60R750E6ATMA1 is an N-Tap MOSFET that belongs to the family of single Field Effect Transistors (FETs). It is mainly used to control large currents without relying on inductive loads, since it is resistant to high frequencies and low on-resistance. IPD60R750E6ATMA1 is also capable of switching between high and low logic levels accurately, making it highly reliable and efficient.

The device works on a principle known as the “Equal Channel Model”, which is a variation of the conventional Metal-Oxide Semiconductor Field Effect Transistor (MOSFET). It utilizes a single channel of carriers from the source to the drain terminal. The device is then able to control the current by varying the applied voltage on the source, gate and drain. In this particular case, the source voltage acts as a negative voltage, which acts to reduce the current flow.

This model makes it possible for IPD60R750E6ATMA1 to be used for a variety of applications. It is mainly used for power switches, load switches, voltage and current sensors, motor controllers, and various kinds of amplifiers and converters. The device can be used in many other applications, such as automotive electronics, power supply circuits, and other switching applications. It is also capable of being used as a synchronous switching rectifier and a differential amplifier.

This device has a maximum drain current of 75 amperes and is capable of withstanding a maximum drain-source voltage of 600 volts. Its maximum operating temperature is rated at 175°C, which makes it suitable for use in harsh environments. Its small package size allows for it to be used in limited spaces, while its high-speed switching capability ensures that the device is both efficient and reliable.

The device utilizes a trench-gate structure in order to achieve a more efficient and reliable performance. It is capable of reducing gate charge and capacitance, which makes it more efficient for switching applications. The gate also has a high auto-saturation voltage, which reduces the amount of current needed to turn on the device.

All in all, the IPD60R750E6ATMA1 is a reliable and efficient device that is perfectly suited for powering, switching and controlling applications in a wide range of environments. Its small package size and high-speed switching make it perfect for applications that require quick and accurate switching, while its trench-gate structure adds to its reliability and efficiency. It is definitely a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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