IPD60R600C6ATMA1

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The IPD60R600C6ATMA1 part from Infineon Technologies is an N-channel MOSFET (metal-oxide semiconductor field-effect transistor) that has been designed for a wide range of applications. It has a drain current of 60 A, an on-state resistance of 0.62 Ω, a gate-drain voltage of ±20 V and an almost zero drain-source capacitance. The IPD60R600C6ATMA1 is a robust, high-performance solution for power switch modules and high-side switch applications to carry high currents at low on-state resistance. This MOSFET can be used in broadly ranging applications, such as professional lighting control and home appliances, robotics and industrial automation, power tools and garden equipment, automotive 12/24V DC charging, and many other fields.

Working Principle

A MOSFETs is an active solid-state device that acts as an efficient switch for a circuit or application. When a gate voltage is applied, current flows from the source to the drain. The IPD60R600C6ATMA1 MOSFET has an N-channel design, which prevents current from flowing in any direction unless the correct voltage is applied to the gate. The device is constructed from a silicon substrate that is coated with an insulation layer (oxide layer) – which forms the gate. When a signal is applied to the gate, it changes the channel’s electrical field, allowing current to flow through the channel.

Features

The IPD60R600C6ATMA1 MOSFET is designed for high-efficiency switching applications with a range of features, including:

• High current capacity of 60A
• Low on-state resistance of 0.62 ohm
• Gate-drain voltage of ±20V
• Low drain-source capacitance
• High-frequency switching performance
• High pulse strength

Applications

The IPD60R600C6ATMA1 MOSFET is designed to operate in numerous power switch modules and high-side switch applications to carry high currents with low on-state resistance. Its low drain-source capacitance and high-frequency switching performance make it suitable for a variety of applications, such as:

• Professional lighting control and home appliances
• Robotics and industrial automation
• Power tools and garden equipment
• Automotive 12/24V DC charging
• Switching power supplies
• Motor control and actuation
• Solar and wind energy harvesting
• Uninterruptible power supplies

Conclusion

The IPD60R600C6ATMA1 MOSFET from Infineon Technologies is a high-performance and robust active solid-state device that is suitable for a broad range of power-switching applications. Its high current capacity, low on-state resistance, and high pulse strength make it an ideal choice for systems, such as professional lighting control, robotics, power tools and garden equipment, automotive charging, switching power supplies, and uninterruptible power supplies.

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