Allicdata Part #: | IPD60R650CEBTMA1-ND |
Manufacturer Part#: |
IPD60R650CEBTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 7A TO252 |
More Detail: | N-Channel 600V 7A (Tc) 82W (Tc) Surface Mount PG-T... |
DataSheet: | IPD60R650CEBTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 200µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 82W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20.5nC @ 10V |
Series: | CoolMOS™ CE |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 2.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The IPD60R650CEBTMA1 is an advanced insulated gate field effect transistor (IGFET) or also known as a metal oxide semiconductor field effect transistor (MOSFET). It is a specific type of MOSFET which comes in a single section structure with easy to handle pin layouts.
The IPD60R650CEBTMA1 is an advanced insulated gate field effect transistor that is used in many applications. It is mainly utilized in power management, battery protection, and switching circuits. Other applications include high-frequency DC-DC converters and RF transmitters, high voltage motor control, and a variety of high-power switching applications. It is also capable of supporting synchronous rectified buck converter or boost converter applications.
The IPD60R650CEBTMA1 offers high performance and reliability in difficult conditions. It has an excellent combination of ruggedness, fast switching, and small size. Its design meets challenging applications and provides a robust solution. It has an excellent range of voltage and current ratings and is capable of switching frequencies up to 200kHz.
The IPD60R650CEBTMA1 uses insulated gate bipolar transistor technology (IGBT) and therefore offers a single device power management solution that can automate the current levels, maintain a safe temperature, and provide enhanced reliability. It provides improved temperature characteristics and excellent immunity to spikes and thermal shock.
The working principle of the IPD60R650CEBTMA1 is based on the silicon-based MOSFETs. This technology uses two insulated gates made of high-grade semiconductor material, enforced by an insulated gate that is energized with a voltage, also known as the gate voltage. When the applied voltage reaches a certain threshold voltage, current will start to pass through the existing channel, and the transistor will turn on. This process is reversible, so by reducing the voltage, the switch will turn off again.
The insulated gate field effect transistor is a highly useful and reliable device in many applications. It allows for fast switching and energy efficiency. The IPD60R650CEBTMA1 leverages this technology for use in power management, battery protection, and many switching applications. Its excellent ratings, ruggedness, and small size make it a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IPD60R380P6BTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 3TO252N-... |
IPD60R520CPATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 6.8A TO-... |
IPD60R600CPATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 6.1A TO-... |
IPD60R650CEBTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 7A TO252... |
IPD60R380E6BTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET NCH 600V 10.6A TO2... |
IPD60R380E6ATMA2 | Infineon Tec... | 0.0 $ | 1000 | MOSFET NCH 600V 10.6A TO2... |
IPD60R3K3C6ATMA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 600V 1.7A TO2... |
IPD60R950C6ATMA1 | Infineon Tec... | 0.35 $ | 1000 | MOSFET N-CH 600V 4.4A TO2... |
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