IPD60R180C7ATMA1 Allicdata Electronics
Allicdata Part #:

IPD60R180C7ATMA1-ND

Manufacturer Part#:

IPD60R180C7ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO252-3
More Detail: N-Channel 600V 13A (Tc) 68W (Tc) Surface Mount PG-...
DataSheet: IPD60R180C7ATMA1 datasheetIPD60R180C7ATMA1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 260µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: CoolMOS™ C7
Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IPD60R180C7ATMA1 is a MOSFET manufactured by Infineon, mainly used in advanced power electronics designs. It is a N-channel MOSFET integrated with high conduction performance, low switching loss and even lower thermal resistance.

IPD60R180C7ATMA1 is a single-gate MOSFET. Its single gate ensures the high gate-source capacitance and fast drain-source capacitance associated with many advanced devices. Moreover, it has a high transconductance that provides excellent switching performance.

The working principle of IPD60R180C7ATMA1 is based on two main configurations: the enhancement-type and the depletion-type. Enhancement-type MOSFETs are typically used in applications where the output is controlled by a positive input signal, such as amplifiers and voltage regulators. Depletion-type MOSFETs are generally used for applications where the output is controlled by a negative input signal, such as drivers and inverters.

IPD60R180C7ATMA1 is mainly used in automotive and industrial applications. It is suitable for power supply and load control, such as power supplies, DC/DC converters and switching regulators. In addition, it can also be used in the control of high current output devices, such as motors, solenoids, and relays.

When used in automotive applications, IPD60R180C7ATMA1 is particularly suitable for load control in applications such as anti-lock braking systems and traction control systems. It can also be used in applications such as power steering, suspension control and other control systems, such as ABS and ESC systems.

IPD60R180C7ATMA1 is also suitable for automotive lighting control systems, such as LED headlight ballasts, LED external lamps, tail lamps and interior lighting, as well as for mirror movement and temperature control of cabin comfort systems. In addition, it can be used for lighting and illumination control, such as instrument cluster, cluster illumination, and ambient lighting.

IPD60R180C7ATMA1 is also suitable for other industrial applications, such as motor control and automation control, workpiece recognition and positioning control, as well as power conversion and communication systems.

In summary, IPD60R180C7ATMA1 is a single-gate MOSFET that offers both high reactance and fast switching capabilities. It is mainly used in automotive and industrial applications, such as power supply and load control, anti-lock braking systems, traction control systems, power steering, and lighting and illumination control. Its applications also include motor control, automation control, work piece recognition and power conversion.

The specific data is subject to PDF, and the above content is for reference

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