IPD60R1K4C6ATMA1 Allicdata Electronics
Allicdata Part #:

IPD60R1K4C6ATMA1TR-ND

Manufacturer Part#:

IPD60R1K4C6ATMA1

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 3.2A TO252-3
More Detail: N-Channel 600V 3.2A (Tc) 28.4W (Tc) Surface Mount ...
DataSheet: IPD60R1K4C6ATMA1 datasheetIPD60R1K4C6ATMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.24614
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 28.4W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Series: CoolMOS™ C6
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPD60R1K4C6ATMA1 is a type of transistor specifically known as an insulated gate field-effect transistor (IGFET) more commonly known as a Metal Oxide Semiconductor (MOSFET). MOSFETs are voltage-controlled transistors and are part of the larger class known as field-effect transistors (FETs).MOSFETs are a type of dual-gate FET with a layer of oxide between the gates. It is this oxide layer that insulates the gates from each other and provides excellent voltage control in a very small package. The IPD60R1K4C6ATMA1 is a single MOSFET in a TO-220 package, with a drain current of 60A and a maximum drain-to-source voltage of 500V.MOSFETs are used in a wide variety of applications, from power supplies to amplifiers to computer memory. They are used wherever a low-noise and efficient solution to voltage control is desirable. In power supplies and amplifiers, they are used to control the flow of current to reduce power consumption and improve signal quality. In computer memory, they are used to provide fast switching of the memory cells to reduce access time.MOSFETs work by controlling the flow of electrons through the use of an insulated gate. The gate is typically control by a voltage, so when a voltage is applied to the gate, it allows electrons to flow through the device and is said to be ‘on’. When no voltage is applied, the electron flow is blocked, and the device is said to be ‘off’. The IPD60R1K4C6ATMA1 is a N-type FET, meaning that negative voltage is used to turn it on, and positive voltage is used to turn it off.The IPD60R1K4C6ATMA1 is a good choice for many applications due to its good performance and low cost. It provides good efficiency, low noise, and fast switching times, making it ideal for a wide range of applications. It is also small and easy to mount, making it ideal for use in compact, space-constrained applications.Overall, the IPD60R1K4C6ATMA1 is a good choice for many applications. It provides excellent voltage control, good efficiency, low noise, and fast switching times, as well as being cost-effective and easy to mount. It is an ideal choice for a wide range of applications, from power supplies to amplifiers to computer memory.

The specific data is subject to PDF, and the above content is for reference

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