IPD64CN10N G

Vgs(th) (Max) @ Id:	4V @ 20µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	44W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	569pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	9nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	64 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	17A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IPD64CN10N G Application Field and Working PrincipleThis article will be focusing on the IPD64CN10N G field effect transistor (FET), as well as its application fields and working principles.A field effect transistor (FET) is a type of semiconductor device that modulates the electric field between two terminals. In this case, the IPD64CN10N G is an enhancement-mode n-channel FET, meaning the voltage from the drains to the sources should increase to higher values when the gate is more positive. Contrary to the depletion-mode FET, the IPD64CN10N G does not conduct current until a threshold voltage is applied to the gate.The IPD64CN10N G offers three main advantages over other semiconductor devices. First, it is much smaller in size than other devices, meaning that it can be utilized in more compact electronic circuits. Second, it is much more reliable than other electronic devices, due to its resistance to environment factors, such as temperature and vibrations. Finally, it is much more power efficient than other devices, meaning that it requires less energy to do its job. The IPD64CN10N G can be used in a variety of applications, such as power supplies, motors, amplifiers, audio circuits and computer logic. It can be used as a switch, allowing electric current to flow in one direction only when the gate voltage is applied. As a switch, it can be used to control the flow of electricity in an electronic control system. It can also be used as an amplifier, meaning it is capable of increasing the signal strength of an electric current.In addition to its applications, the working principle of the IPD64CN10N G should also be discussed. The key to understanding the working of this FET is its three terminals. The first terminal is the "gate", which is the input terminal where a voltage signal is applied. The second terminal is the "source", which receives the current from the gate terminal. The last terminal is the "drain", which outputs the increased current from the source. The working of the FET follows the principle of capacitance. When a voltage signal is applied to the gate terminal, an electric field is created between the source and the gate, which increases the capacitance between these two terminals. As the capacitance increases, the current flow between the source and the drain increases proportionally. This is known as the channel effect, which is the basis of the FET\'s operation. In conclusion, the IPD64CN10N G is a versatile FET with a wide range of applications. It is power-efficient and highly reliable, making it well-suited for many electronic circuits. The working principle of the IPD64CN10N G is based on the channel effect, in which an electric field is created between the gate and source, increasing the capacitance between these terminals and augmenting the current flow between the source and the drain.

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