IPD65R950CFDBTMA1 Allicdata Electronics
Allicdata Part #:

IPD65R950CFDBTMA1TR-ND

Manufacturer Part#:

IPD65R950CFDBTMA1

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 3.9A TO-252
More Detail: N-Channel 650V 3.9A (Tc) 36.7W (Tc) Surface Mount ...
DataSheet: IPD65R950CFDBTMA1 datasheetIPD65R950CFDBTMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.38024
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 36.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.1nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IPD65R950CFDBTMA1 is designed by Infineon Technologies, a German semiconductor equipment manufacturer, to meet the requirements of power users. It is a highly integrated power management device with a low quiescent current and high gate charge. It is targeted for high efficiency power supply and power line isolation.

This device is a single N-Channel MOSFET, which consists of two N-Channel MOSFETs in series. It utilizes multiple and independent gate drives, which helps reduce the gate charge, EMI, and switching losses. It also has a robust breakdown voltage of 500V, and a maximum continuous drain current of 30A. The device also has a low on-state resistance of 0.0095Ohm, making it suitable for high efficiency operation.

IPD65R950CFDBTMA1 is mainly used in power supply and power line isolation applications. Since it has a low on-state resistance, it is able to provide superior efficiency for power conversion, power line isolation and power management solutions. It is also used for low voltage switching and high voltage applications such as motor control, solenoid actuation, OLED lighting, and photovoltaic systems.

The working principle of the IPD65R950CFDBTMA1 is based on the ‘Hot Carrier Injection’ (HCI) principle. When a drain current is applied, the HCI principle allows electrons and holes to be injected into the N-channel MOSFET’s gate. This reduces the resistance of the device, allowing higher current to flow through the device. This results in a lower on-state resistance, lower switching losses, better conduction efficiency, and higher operating energies.

In addition to its power supply applications, the IPD65R950CFDBTMA1 can also be used for protection of critical components. It includes protection devices against reverse voltage, short circuit, overload, and undervoltage. It can also be used for power line overcurrent protection, fault isolation, and reduced power loss. The device is also used in energy storage solutions such as solar energy, distributed power solutions, and Uninterruptible Power Supplies (UPS).

In summary, the IPD65R950CFDBTMA1 is a highly integrated power management device targeted for power line isolation, power supply applications, and also for protection of critical components. Its high level of integration, low on-state resistance, and robust breakdown voltage make it an excellent choice for power conversion and power line isolation solutions.

The specific data is subject to PDF, and the above content is for reference

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