IPP100N04S204AKSA2

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5300pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	172nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	3.6 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction:

IPP100N04S204AKSA2 is a high-voltage low-side vertical N-Channel MOSFET that is widely used for many applications due to its high current capacity, low on-resistance, and fast switching speed. It is manufactured by Infineon Technologies. This type of MOSFET is used in a variety of applications requiring low on-resistance, high current capacity, and high switching speed such as in DC-DC converters, motor drives, and power supplies.

Application field:

The IPP100N04S204AKSA2 MOSFET can be used in various applications that require a low on-resistance, high current capacity, and fast switching speed. It is especially suitable for DC-DC converters, motor drives, and power supplies. Its high on-resistance reduces switching losses due to its reduced conduction time and the compact size allows for easy mountability. The device can handle high voltages of up to 100V, making it suitable for a range of high-voltage applications. In addition, its low gate threshold voltage and relatively low gate charge also make it desirable for applications requiring high switching frequencies and low current. Furthermore, its Avalanche Rugged Technology ensures that the device can switch high voltages reliably, making it more efficient than other devices.

Working principle:

The IPP100N04S204AKSA2 MOSFET operates in a vertical N-channel mode, wherein a voltage is applied to the device’s gate, thereby allowing current to flow from the device’s source region to its drain region. To fully switch the device on, the voltage applied to the gate has to exceed a certain threshold value known as the gate threshold voltage. This threshold voltage is usually in the range of 4 to 10V, depending on the specific model. Once the voltage applied to the gate is higher than the threshold voltage, the MOSFET enters the fully-on state and current can flow from the source to the drain.The voltage offered by the drain region can be different from the voltage applied to the gate, this is the reason why the device is known as a high-voltage device. The maximum drain-to-source voltage rating for the IPP100N04S204AKSA2 MOSFET is 100V. This means that the die can withstand voltages up to 100V without damaging the device.

Conclusion:

In conclusion, the IPP100N04S204AKSA2 is a MOSFET that provides low on-resistance, high current capacity, and fast switching speed with a maximum drain-to-source voltage of 100V. It is suitable for a variety of applications such as DC-DC converters, motor drives, and power supplies, due to its high current capability and fast switching time. Its low gate threshold voltage and low gate charge also make it desirable for applications requiring high switching frequencies and low current. Its Avalanche Rugged Technology ensures that the device can handle high voltages reliably.

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