IPP17N25S3100AKSA1 Allicdata Electronics
Allicdata Part #:

IPP17N25S3100AKSA1-ND

Manufacturer Part#:

IPP17N25S3100AKSA1

Price: $ 1.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 250V 17A TO-220
More Detail: N-Channel 250V 17A (Tc) 107W (Tc) Through Hole PG-...
DataSheet: IPP17N25S3100AKSA1 datasheetIPP17N25S3100AKSA1 Datasheet/PDF
Quantity: 2533
1 +: $ 1.22220
10 +: $ 1.10250
100 +: $ 0.88597
500 +: $ 0.68909
1000 +: $ 0.57096
Stock 2533Can Ship Immediately
$ 1.34
Specifications
Vgs(th) (Max) @ Id: 4V @ 54µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 100 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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A field effect transistor (FET) is a type of transistor that uses an electric field to control the amount of current that passes through a semiconductor device. The IPP17N25S3100AKSA1 is a single-channel enhancement mode FET that has a drain to source voltage (Vds) of 100 volts and a drain current (Id) of 175 amps. It is also known as a low-side power switch since it can be used to control the flow of current through an electronic device.

The FET works by controlling the amount of charge that can flow through a channel between the source and the drain region. The source terminal receives the input signal which can be an AC or DC voltage. The gate terminal is used to control the amount of current that can flow through the FET. The voltage applied to the gate directly affects the resistance in the channel (Vgs). The higher the voltage applied to the gate, the lower the resistance becomes and the more current can flow from the source to the drain.

The IPP17N25S3100AKSA1 can be used in a variety of applications where precise control of power is required. For example, it can be used in motor drives to control the speed of motors. It can also be used in power supply designs to change the output voltage precisely. Moreover, it can be used in switch-mode power supplies to control the switching of power transistors quickly and accurately. Moreover, it can be used in pulse width modulated controllers and analog circuits to perform complex waveform generation tasks.

In addition to its practical applications, the FETs are also used in research and academic projects to understand the behavior of semiconductor materials. By controlling the amount of current that passes through the FET, scientists can study the electrical characteristics of a particular material. With this information, they can develop new generations of transistors that are more efficient and resistant to temperature and voltage fluctuations.

The IPP17N25S3100AKSA1 FET offers significant advantages in performance, power consumption and cost over other types of power switch. It has a low on-resistance and is fast switching, allowing it to act as a substitute for costly mechanical switching components. As such, it has become an indispensible component in many electronic designs and applications.

The specific data is subject to PDF, and the above content is for reference

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