
Allicdata Part #: | IPP100N12S305AKSA1-ND |
Manufacturer Part#: |
IPP100N12S305AKSA1 |
Price: | $ 2.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CHANNEL_100+ |
More Detail: | |
DataSheet: | ![]() |
Quantity: | 1000 |
500 +: | $ 1.86775 |
Specifications
Series: | * |
Part Status: | Active |
Description
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IPP100N12S305AKSA1 application field and working principle
IntroductionIPP100N12S305AKSA1 is an n-channel super-junction MOSFET manufactured by Infineon Technologies. It is also known as the SuperFRED technology. This type of transistor has been designed to provide an efficient and power dense solution for general purpose switching and linear regulated applications, such as hard drives, power supplies and lighting applications. As such, it offers a wide range of applications and operating modes, from the industrial to the consumer market. This article explains the application field and working principle of IPP100N12S305AKSA1.Application Field
IPP100N12S305AKSA1 provides a wide range of applications across both the industrial and consumer markets. The SuperFRED technology employed by this transistor allows for very precise circuit control and is particularly suitable for powering converter applications. It is used in lighting applications because of its high efficiency, low on-resistance, and wide range of operating modes. It is also commonly employed in power supplies and hard drives due to its low operating voltages, low temperature and high power density.Working Principle
IPP100N12S305AKSA1 is based on a vertical power MOSFET structure. It employs advanced SuperFRED technology to achieve its high efficiency and power density. This technology helps to reduce the gate length, allowing for smaller devices and faster switching. It also improves the electro-thermal performance of the device due to its advanced self-biased design, high peak current capability and low on-resistance.The device is an n-channel vertical power MOSFET. It works in the following way: when a voltage is applied to the gate, electrons are attracted to the gate and the channel forms between the source and drain. This forms an inversion layer between the two terminals, allowing for conductivity. This conductivity is then leveraged for switching and/or linear applications, depending upon the design requirements.Conclusion
IPP100N12S305AKSA1 is an n-channel vertical power MOSFET designed by Infineon Technologies. It utilizes SuperFRED technology to provide a power dense and efficient solution for general purpose switching and linear regulated applications. The device is particularly suitable for powering converter applications and is often employed in lighting applications, hard drives, and power supplies. It operates by forming an inversion layer between the source and drain terminals when a voltage is applied to the gate, allowing for current to flow.
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