IPP12CNE8N G

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The IPP12CNE8N G is a high performance integrated circuit designed and manufactured by Infineon Technologies. It is an advanced MOSFET (Metal Oxide Semiconductor Field Effect Transistor, also known as a Field Effect Transistor or FET) that is designed for use in high-power applications and high-speed switching applications. This particular device is a single transistor that has been designed specifically to improve power efficiency and reduce power losses when used in applications such as power supplies, servers, automotive systems and motor control systems.

The IPP12CNE8N G is a n-channel enhancement-mode MOSFET that uses an epitaxial layer MOSFET structure. This means that the gate of the device is surrounded by a thin barrier layer of insulating material on its sides and below, which provides excellent gate-to-channel isolation and improves the performance of the device by reducing power losses across the gate-to-source channel.

The device can be operated at a wide range of temperatures, from -55°C to +135°C and can handle up to an absolute maximum voltage of 800V. The maximum continuous drain-to-source current (ID) of this device is 13A and its maximum drain-to-source voltage (VDS) is 80V.

The device has a low resistance when turned on, which allows it to switch quickly and efficiently. It also has a low capacitance when turned off, which reduces power losses and improves energy efficiency. The device also has a very low input capacitance when used with a gate driver, which improves switching speed and reduces electromagnetic emissions.

The device is well suited for use in high power applications, such as power supplies, motor drives, and other high-speed switching applications. The device has a fast switching time and low power losses, making it ideal for applications in which efficiency is a priority. It can also be used in applications in which fast switching and high power are required.

In summary, the IPP12CNE8N G is a highly efficient and reliable single n-channel enhancement-mode MOSFET from Infineon Technologies. It has low power losses, fast switching times, and is suitable for a wide range of applications, making it a popular choice of device amongst engineers and designers alike.

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