Allicdata Part #: | IPP100N04S4H2AKSA1-ND |
Manufacturer Part#: |
IPP100N04S4H2AKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 100A TO220-3-1 |
More Detail: | N-Channel 40V 100A (Tc) 115W (Tc) Through Hole PG-... |
DataSheet: | IPP100N04S4H2AKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 70µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 115W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The devices known as IFP100N04S4H2AKSA1 are insulated gate field effect transistors (IGFETs) commonly known as Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). These devices are of the single type, meaning that they are made up of one source, one drain and one gate. The IFP100N04S4H2AKSA1, specifically, is a N-channel enhancement type MOSFET, as indicated by the "N" letter preceding the drain current rating referenced in the device’s part number.
MOSFETs have many uses thanks to their excellent characteristics, such as low drain-source on-resistance, high transconductance, low capacitance, fast switching speed and extremely low gate drive power. Because of these attributes, MOSFETs are used in a broad range of applications, from simple switching to analog and even digital circuits.
In terms of applications, IFP100N04S4H2AKSA1 are small signal devices that are commonly used for low-voltage, low-current applications, such as signal amplification, signal switching, power control and other power switching applications. In these applications, the IFP100N04S4H2AKSA1 can also be used as a voltage-controlled switch, where a signal applied to the gate will switch on or off the current flowing through the source and the drain.
In terms of working principle, the IFP100N04S4H2AKSA1 operates on the principle of Field Effect Transistor (FET) or directly, Metal-Oxide-Semiconductor (MOS) technology. It basically consists of a gate terminal connected to a semiconductor substrate and two source/drain terminals, which are connected to a source of electricity. When a voltage is applied to the gate terminal, it forms an electric field in the underlying substrate, inducing a current through the substrate from the source to the drain, which then passes current from the source to the drain.
So, in practice, the IFP100N04S4H2AKSA1 works as a voltage-controlled device, where the gate voltage can be used to switch on (or off) the current flow within the device. Furthermore, due to its excellent switching characteristics, it can be used in both analog and digital circuits, thus covering a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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