IPP11N03LA

Series:	OptiMOS™
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	11.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 5V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1358pF @ 15V
FET Feature:	--
Power Dissipation (Max):	52W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-3-1
Package / Case:	TO-220-3

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Introduction

The Ipp11N03LA is a N-channel power MOSFET. Its low on-resistance and low gate charge make it ideal for use in applications that require high current, low loss control at frequencies up to 100KHz. This device is also suitable for switching, motor control and regulation circuits.

Features

The Ipp11N03LA has a variety of features including: low Gate-Source voltage (Vgs), low Gate-Drain capacitance (Cgd), low RDSon, and low charge output. Additionally, the Ipp11N03LA has a high maximum Power Dissipation (Pd) and low power loss.

Application Fields

The Ipp11N03LA can be used in a variety of applications, including: switching, motor control, regulation, and power management systems. It can also be used in consumer and industrial devices such as: motor drives, power tools, power supplies, data converters, and motor control systems.

Working Principle

The Ipp11N03LA works by allowing electrons to flow from the source to the drain when the voltage across the Gate-Source is increased. This increases the current flow through the channel, which causes the voltage across the Gate-Drain to drop. This drop in voltage increases the electrostatic force between the Gate and the Source and drains, causing a reduction in the resistance of the channel, which increases the current flow from the source to the drain.

Conclusion

The Ipp11N03LA is a powerful and efficient N-channel power MOSFET. Its low on-resistance, low gate charge and low power loss make it ideal for use in high current applications that require low loss control. Its application fields include switching, motor control, regulation, and power management systems, as well as consumer and industrial devices. The working principle of the Ipp11N03LA is based on the principle of electron flow from the source to the drain when the voltage across the Gate-Source is increased.

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