IPP100N08N3GXKSA1 Allicdata Electronics
Allicdata Part #:

IPP100N08N3GXKSA1-ND

Manufacturer Part#:

IPP100N08N3GXKSA1

Price: $ 1.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 80V 70A TO220-3
More Detail: N-Channel 80V 70A (Tc) 100W (Tc) Through Hole PG-T...
DataSheet: IPP100N08N3GXKSA1 datasheetIPP100N08N3GXKSA1 Datasheet/PDF
Quantity: 606
1 +: $ 1.17810
10 +: $ 1.06533
100 +: $ 0.85598
500 +: $ 0.66576
1000 +: $ 0.55163
Stock 606Can Ship Immediately
$ 1.3
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPP100N08N3GXKSA1 is a common single N-channel MOSFET semiconductor designed for power switch applications in various electronic devices. It is a center-gate and source-terminal type of transistor, suitable for low-side power switch applications such as motor control, battery charging and discharge etc. In short, this Mosfet, due to its high current carrying ability, is most commonly employed to continuously control and regulate the operating current, while maintaining high efficiency and temperature stability.

The IPP100N08N3GXKSA1 has a wide range of applications, ranging from AC and DC motors, hot plates, Audio-visual equipment and general power switching. The device is also used in voltage regulation circuits and low-side protection circuits in power supplies, UPS systems and AC adapters. In addition, this Mosfet is often used as a switching device for consumer electronics, in particular for automotive, TV, microwave oven and home appliance systems.

The working principle of the IPP100N08N3GXKSA1 is based on its unique physical structure and design. The device is constructed using an insulated gate structure, which is made of a stack of N-type and P-type semiconductor materials. The gate voltage is selectively applied to the body by an external signal to form an N-channel. This N-channel acts like a switch that controls the flow of electrons in the source and drain regions of the transistor.

When the gate voltage is applied, an electric field is formed in the N-channel region and acts like a virtual gate, allowing electrons to pass between the source and drain regions. This allows the device to control the current flow in a circuit. Additionally, the body of the transistor conducts heat away from the transistor, thus preventing it from overheating.

Overall, the IPP100N08N3GXKSA1 is a popular single N-channel MOSFET semiconductor designed for power switch applications. It has a wide range of applications in various electronic devices, and its working principle is based on a unique insulated gate structure that allows it to control the current in a circuit. Besides, the transistor\'s design also prevents it from overheating, making it a reliable and durable choice when it comes to power switch applications.

The specific data is subject to PDF, and the above content is for reference

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