IPP120N04S402AKSA1

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The IPP120N04S402AKSA1 is a power Field-Effect Transistor (FET) used mainly for power management applications. It is a single, non-polar N-channel power FET (MOSFET) with a nominal unit of 40V, 0. 83A, 4. 2Ω ON resistance at 25°C and a 2. 7V, 1. 5A Saturation Voltage (2. 3V, 1. 2A at 150°C). The device has a wide channel length range, low RDS(on), and low capacitance to enable excellent thermal performance and circuitry protection against overloads.

This MOSFET is often used in high-side switching applications where the FET is placed directly between the power supply and the load. It is mainly used for high-current and low-voltage DC/DC converter, low-noise switching circuit, and pulse power supplies. By using this MOSFET, designers are able to construct robust power circuits with high-efficiency, low-power loss, high-switching speed, fast current pass-through speed, and low EMI. Because of its high-performance, this MOSFET is ideal for automotive, telecom, computer and consumer electronic applications.

Working Principle

The working principle of the IPP120N04S402AKSA1 is simple. To start, the Gate terminal is supplied with a voltage, which sets a bias between the Gate and Drain, or Source. This results in an electrostatic field that controls the conductivity of the material (silicon) in the channel of the device. When an electric current flows through the channel, it creates an electron accumulation, which results in a depletion region ( depletion layer) between the Gate and Source or Drain. This creates a P-channel depletion layer that increases the resistance between the Source and the Drain, which is the actual switch. When the Gate voltage increases, the voltage necessary to leave the channel increases, which reduces the conduction and current flow between the Source and Drain, thus turning the device off.

When the Gate voltage is decreased, the voltage needed to enter the channel reduces, and this increases the conduction and current flow between the Source and Drain, thus turning the device on. This simple principle, combined with the properties of this FET, makes the device an excellent choice for low- and high-voltage power applications.

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