Allicdata Part #: | IPP120N06S4H1AKSA1-ND |
Manufacturer Part#: |
IPP120N06S4H1AKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 120A TO220-3 |
More Detail: | N-Channel 60V 120A (Tc) 250W (Tc) Through Hole PG-... |
DataSheet: | IPP120N06S4H1AKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 200µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 21900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The ipp120N06s4H1AKSA1 is a Power MOSFET manufactured by IXYS Corporation. It is a metal-oxide semiconductor field-effect transistor (MOSFET) that is designed for direct current switching applications and low voltage high frequency applications. This device performs well in high current, low switching frequency, and high frequency operations. It is ideal for use in a range of applications including power inverters and AC/DC converters. The ipp120N06s4H1AKSA1 is a single-die FET with a low capacitance design, meaning it has excellent switching performance and wide frequency operation. It also provides an industry-leading low on-resistance, quick switching speed, and low input and output capacitance.
The working principle of the ipp120N06s4H1AKSA1 is based on the MOSFET technology. This device consists of four main components: the gate, the drain, the source, and the substrate. The gate is a controllable terminal and serves as the switching element of the transistor. When the gate voltage is low, the drain and source terminals are connected by a channel. When the gate voltage is high, the channel is switched off and no current can flow. The applied gate-source voltage determines the conductivity of the transistor, allowing for the efficient switching of current.
This MOSFET device has a wide range of applications, making it suitable for use in a variety of industries. Its high switching speed and low on-resistance makes it ideal for use in high-end power inverters and AC/DC converters, which require efficient control of high power. It is also suitable for use in motor control applications, as it offers excellent power saving solutions. It has a wide range of applications, including robotics, medical equipment, motor drivers, and industrial machines. The low input and output capacitance of this device allows it to be used in a variety of high frequency applications, such as in radio frequency transmission systems.
The ipp120N06s4H1AKSA1 is the perfect solution for high current, low voltage, and high-frequency applications. It features a low on-resistance and fast switching speed, while providing an industry-leading low input and output capacitance. This device is ideal for use in a wide range of applications in the industrial and commercial sectors, making it a versatile and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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