IPP120N06NGAKSA1

Vgs(th) (Max) @ Id:	4V @ 94µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	158W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2100pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	62nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	12 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IPP120N06NGAKSA1 is a high-performance N-channel enhancement mode MOSFET commonly used in switching and amplification circuits. It is suitable for a variety of applications such as power management, voltage regulation, and switching. The IPP120N06NGAKSA1 has a maximum drain source voltage of 120V, a maximum drain current of 24A, a maximum power dissipation of 180W, a on-resistance of 0.09 Ω, a maximum gate-source voltage of ±20V, a maximum junction temperature of 175°C, and a gate charge of 78nC. It is an extremely robust and reliable transistor suitable for low-voltage and high-current applications. The IPP120N06NGAKSA1 is a MOSFET, or Metal Oxide Semiconductor Field Effect Transistor. As the name implies, this type of transistor is made up of a semiconductor-metal oxide-semiconductor structure. It is an enhancement-mode type transistor, which means it does not require a gate bias voltage to be operated. A voltage applied between the gate and the source of the transistor can be used to either turn on or turn off current flow from the drain to the source. The operating principle of the IPP120N06NGAKSA1 is the same as that of most MOSFETs. When a positive voltage is applied to the gate relative to the source, a conductive channel is created between the source and drain, allowing current to flow when a voltage is applied across the drain and source. This makes the IPP120N06NGAKSA1 an ideal solution for high-side switching, voltage regulation, and power management. The IPP120N06NGAKSA1 is a versatile device because it is suitable for a variety of applications. Its low on-resistance and high current rating make it an ideal choice for switching circuits that require a high amount of current to be passed through them. Its robustness and reliability make it a great choice for voltage regulation and power management applications. The IPP120N06NGAKSA1 is a great choice for a variety of applications due to its robust structure and high current rating. It is suitable for high-side switching, voltage regulation, and power management applications. Its low on-resistance and maximum drain current of 24A make it an ideal choice for switching circuits that require a high amount of current to be passed through. Its gate charge of 78nC, combined with its low gate-source voltage, make it an ideal choice for voltage regulation applications. Its reliability and robustness make it a great choice for power management applications. In conclusion, the IPP120N06NGAKSA1 is a reliable and robust N-channel enhancement-mode MOSFET with a low on-resistance, high current rating, and low gate-source voltage. This allows it to be used in a variety of applications such as high-side switching, voltage regulation, and power management applications. Its robustness and reliability make it a great choice for these applications.

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