Allicdata Part #: | IPP114N12N3GXKSA1-ND |
Manufacturer Part#: |
IPP114N12N3GXKSA1 |
Price: | $ 1.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 120V 75A TO220-3 |
More Detail: | N-Channel 120V 75A (Tc) 136W (Tc) Through Hole PG-... |
DataSheet: | IPP114N12N3GXKSA1 Datasheet/PDF |
Quantity: | 354 |
1 +: | $ 1.60650 |
10 +: | $ 1.45278 |
100 +: | $ 1.16764 |
500 +: | $ 0.90818 |
1000 +: | $ 0.75249 |
Vgs(th) (Max) @ Id: | 4V @ 83µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4310pF @ 60V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 11.4 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 120V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPP114N12N3GXKSA1 is a type of Field-Effect Transistor (FET) using MOSFET technology. This device is quite popular due to its versatility and high performance. It can be used in a wide variety of applications, making it a great choice for modern engineers. As such, it is important to understand the basics of how this FET works, as well as the application fields and working principles of the IPP114N12N3GXKSA1.
At its most basic level, the IPP114N12N3GXKSA1 is a type of Field-Effect Transistor, or FET. This transistor is composed of an insulated gate, which is connected to a source, and a drain. The gate voltage potential applied to the gate controls the electron flow between the source and the drain. When the gate is switched on, a channel forms between the source and the drain, allowing current to flow. This type of transistor has lower power consumption than other transistors because it is only switched on and off, as opposed to electrically amplifying a signal as in bipolar transistors.
The IPP114N12N3GXKSA1 FET has a number of applications fields. The first is power switching, where the FET is used to switch off high voltage and current signals. The FET can also be used in motor control and power supply applications. In motor control, the FET is typically used to increase or decrease the voltage to the motor. The FET can also be used in DC-DC converters, where the device is used to provide a constant output voltage regardless of input voltage fluctuations. The FET can also be used in audio and video applications, where the FET is used to reduce noise and other unwanted signals.
The working principle of the IPP114N12N3GXKSA1 FET is relatively simple. When the gate voltage is applied, a small conducting channel is formed between the source and the drain. This creates an inversion layer, where the electrons in the region of the gate can flow freely between the source and the drain. The electrons are then conducted away, creating an electron flow between the source and the drain. The voltage applied to the gate controls the amount of current flowing through this channel.
The IPP114N12N3GXKSA1 FET is a very versatile device and can be used in a variety of applications. Its working principle is fairly easy to understand and its power consumption is relatively low, making the FET a great choice for modern engineers. Additionally, the FET is easy to use and offers a wide range of options for customizing its performance. All of these factors make the IPP114N12N3GXKSA1 FET a great choice for many applications, from power switching to motor control and from audio and video applications to DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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