IPP100N06S3-03

Vgs(th) (Max) @ Id:	4V @ 230µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	21620pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	480nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	3.3 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IPP100N06S3-03 is a three-terminal, N-channel MOSFET with a drain-source current capacity of 100A. It has a typical threshold voltage of 10V, a maximum drain-source voltage of 200V and a drain-source on-state resistance of 0.06 Ohm. The MOSFET is packaged in a TO-263-3L, 3-pin package and is ideal for switching applications with very low on-state resistance. ApplicationsThe IPP100N06S3-03 MOSFET is designed mainly for switching applications with very low on-state resistance. It is well-suited for applications in which high current is switched at relatively high frequencies with very low losses. These applications include motor control, switch-mode power supplies, power amplifiers, and other high current applications.The IPP100N06S3-03 MOSFET can also be used for power switching applications, such as solar inverters, electric vehicle inverters, battery charging circuits and motor control. It is also well-suited for load-switching applications, such as load switching for solar inverters, motor control, and other applications requiring high current switching.Working PrincipleThe IPP100N06S3-03 MOSFET operates on principles of a metal-oxide-semiconductor field effect transistor (MOSFET). It is composed of an N-channel semiconductor substrate and gate electrode which together create a field effect between the source and drain terminals. When a voltage is applied to the gate, it creates an electric field which creates a conductive channel between the source and drain. This conductive channel allows current to flow from the source to the drain.The IPP100N06S3-03 MOSFET has a low input capacitance and a high input impedance which allows it to switch quickly with minimal losses. The low on-state resistance of the MOSFET also reduces power dissipation, resulting in higher efficiency.ConclusionThe IPP100N06S3-03 is a three-terminal, N-channel MOSFET with a drain-source current capacity of 100A, a typical threshold voltage of 10V, and a maximum drain-source voltage of 200V. It is well-suited for applications requiring high current switching with low on-state resistance, such as motor control, switch-mode power supplies, power amplifiers, and other high current applications. It also has a low input capacitance and high input impedance which allow it to switch quickly with minimal losses, and its low on-state resistance reduces power dissipation.

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